公开(公告)号：WO2015126575A3

公开(公告)日：2015-10-29

申请号：PCT/US2015012975

申请日：2015-01-27

Applicant: GEN ELECTRIC

Inventor： MCMAHON JAMES JAY ,  STEVANOVIC LJUBISA DRAGOLJUB ,  ARTHUR STEPHEN DALEY ,  GROCZYCA THOMAS BERT ,  BEAUPRE RICHARD ALFRED ,  STUM ZACHARY MATTHEW ,  BOLOTNIKOV ALEXANDER VIKTOROVICH

IPC: H01L29/78 ,  H01L21/336 ,  H01L29/423

CPC classification number: H01L29/7802 ,  H01L21/045 ,  H01L21/049 ,  H01L29/1608 ,  H01L29/42368 ,  H01L29/66068

Abstract: A semiconductor device is presented. The device includes a semiconductor layer including silicon carbide, and having a first surface and a second surface. A gate insulating layer is disposed on a portion of the first surface of the semiconductor layer, and a gate electrode is disposed on the gate insulating layer. The device further includes an oxide disposed between the gate insulating layer and the gate electrode at a corner adjacent an edge of the gate electrode so as the gate insulating layer has a greater thickness at the corner than a thickness at a center of the layer. A method for fabricating the device is also provided.

Abstract translation: 介绍了一种半导体器件。 该器件包括含有碳化硅的半导体层，并具有第一表面和第二表面。 栅绝缘层设置在半导体层的第一表面的一部分上，栅电极设置在栅绝缘层上。 该器件还包括设置在栅极绝缘层和栅电极之间的邻近栅电极的边缘的拐角处的氧化物，从而栅极绝缘层在拐角处具有比该层的中心处的厚度更大的厚度。 还提供了用于制造该装置的方法。

公开(公告)号：WO2015126575A8

公开(公告)日：2016-08-18

申请号：PCT/US2015012975

申请日：2015-01-27

Applicant: GEN ELECTRIC

Inventor： MCMAHON JAMES JAY ,  STEVANOVIC LJUBISA DRAGOLJUB ,  ARTHUR STEPHEN DALEY ,  GORCZYCA THOMAS BERT ,  BEAUPRE RICHARD ALFRED ,  STUM ZACHARY MATTHEW ,  BOLOTNIKOV ALEXANDER VIKTOROVICH

IPC: H01L29/78 ,  H01L21/336 ,  H01L29/423

CPC classification number: H01L29/7802 ,  H01L21/045 ,  H01L21/049 ,  H01L29/1608 ,  H01L29/42368 ,  H01L29/66068

Abstract: A semiconductor device is presented. The device includes a semiconductor layer including silicon carbide, and having a first surface and a second surface. A gate insulating layer is disposed on a portion of the first surface of the semiconductor layer, and a gate electrode is disposed on the gate insulating layer. The device further includes an oxide disposed between the gate insulating layer and the gate electrode at a corner adjacent an edge of the gate electrode so as the gate insulating layer has a greater thickness at the corner than a thickness at a center of the layer. A method for fabricating the device is also provided.

Abstract translation: 介绍了半导体器件。 该器件包括具有碳化硅的半导体层，并具有第一表面和第二表面。 栅极绝缘层设置在半导体层的第一表面的一部分上，栅电极设置在栅极绝缘层上。 该器件还包括设置在栅极绝缘层和栅电极之间的邻近栅电极的边缘的角部处的氧化物，因此栅极绝缘层在角部具有比层的中心处的厚度更大的厚度。 还提供了一种用于制造该装置的方法。

公开(公告)号：BR102013026784A2

公开(公告)日：2014-09-16

申请号：BR102013026784

申请日：2013-10-17

Applicant: GEN ELECTRIC

Inventor： STUM ZACHARY MATTHEW ,  GHANDI REZA

IPC: H01L29/51 ,  H01L29/78

公开(公告)号：CA2829245C

公开(公告)日：2020-09-22

申请号：CA2829245

申请日：2013-10-03

Applicant: GEN ELECTRIC

Inventor： STUM ZACHARY MATTHEW ,  GHANDI REZA

IPC: H01L21/283 ,  H01L29/45

Abstract: A silicon carbide device is presented that includes a gate electrode disposed over a portion of a silicon carbide substrate as well as a dielectric film disposed over the gate electrode. The device has a contact region disposed near the gate electrode and has a layer disposed over the dielectric film and over the contact region. The layer includes nickel in portions disposed over the dielectric film and includes nickel silicide in portions disposed over the contact region. The nickel silicide layer is configured to provide an ohmic contact to the contact region of the silicon carbide device.

公开(公告)号：DE102011056544A1

公开(公告)日：2012-06-21

申请号：DE102011056544

申请日：2011-12-16

Applicant: GEN ELECTRIC

Inventor： STUM ZACHARY MATTHEW ,  MATOCHA KEVIN SEAN ,  ARTHUR STEPHEN DALEY ,  LOSEE PETER ALMERN

IPC: H01L21/265 ,  H01L21/22 ,  H01L21/336

Abstract: Ein Verfahren, zu dem die Schritte gehören: Einbringen einer Dotierungssubstanz in eine Halbleiterschicht, um ein Vertiefungsgebiet der Halbleiterschicht zu bilden, wobei das Vertiefungsgebiet ein Kanalgebiet aufweist; und Einbringen einer Dotierungssubstanz in das Vertiefungsgebiet, um ein mehrfach implantiertes Gebiet zu bilden, das im Wesentlichen mit dem Vertiefungsgebiet übereinstimmt, jedoch das Kanalgebiet ausschließt.

公开(公告)号：CA2872941C

公开(公告)日：2021-03-30

申请号：CA2872941

申请日：2013-05-15

Applicant: GEN ELECTRIC

Inventor： ARTHUR STEPHEN DALEY ,  BOLOTNIKOV ALEXANDER VIKTOROVICH ,  LOSEE PETER ALMERN ,  MATOCHA KEVIN SEAN ,  SAIA RICHARD JOSEPH ,  STUM ZACHARY MATTHEW ,  STEVANOVIC LJUBISA DRAGOLJUB ,  KISHORE KUNA VENKAT SATYA RAMA ,  KRETCHMER JAMES WILLIAM

IPC: H01L29/861 ,  H01L21/266 ,  H01L29/06 ,  H01L29/16 ,  H01L29/739 ,  H01L29/78

Abstract: A semiconductor device (200) is provided and includes a substrate (202) comprising silicon carbide; a drift layer (214) disposed over the substrate and comprising a drift region (214) doped with a first (n-type) dopant type, so as to have a first conductivity type; and a second region (216) adjacent to the drift region and proximal to a surface (204) of the drift layer. The second region is doped with a second (p-type) dopant type, so as to have a second conductivity type. The semiconductor device further includes a junction termination extension (JTE) (220) disposed adjacent to the second (well) region. The JTE has a width Wjte and comprises a number of discrete regions (221) separated in a first direction and in a second direction and doped with varying concentrations of the second (p-type) dopant type, so as to have an effective doping profile of the second conductivity type of a functional form that generally decreases along a direction away from the edge of the primary blocking junction (230). The width wjte is less than or equal to a multiple of five times the width of the one- dimensional depletion width (Wdepi ID), and the charge tolerance of the semiconductor device is greater than 1.0 xl013 per cm2.

公开(公告)号：CA2872941A1

公开(公告)日：2013-11-21

申请号：CA2872941

申请日：2013-05-15

Applicant: GEN ELECTRIC

Inventor： ARTHUR STEPHEN DALEY ,  BOLOTNIKOV ALEXANDER VIKTOROVICH ,  LOSEE PETER ALMERN ,  MATOCHA KEVIN SEAN ,  SAIA RICHARD JOSEPH ,  STUM ZACHARY MATTHEW ,  STEVANOVIC LJUBISA DRAGOLJUB ,  KISHORE KUNA VENKAT SATYA RAMA ,  KRETCHMER JAMES WILLIAM

IPC: H01L29/861 ,  H01L21/266 ,  H01L29/06 ,  H01L29/16 ,  H01L29/739 ,  H01L29/78

Abstract: A semiconductor device (200) is provided and includes a substrate (202) comprising silicon carbide; a drift layer (214) disposed over the substrate and comprising a drift region (214) doped with a first (n-type) dopant type, so as to have a first conductivity type; and a second region (216) adjacent to the drift region and proximal to a surface (204) of the drift layer. The second region is doped with a second (p-type) dopant type, so as to have a second conductivity type. The semiconductor device further includes a junction termination extension (JTE) (220) disposed adjacent to the second (well) region. The JTE has a width Wjte and comprises a number of discrete regions (221) separated in a first direction and in a second direction and doped with varying concentrations of the second (p-type) dopant type, so as to have an effective doping profile of the second conductivity type of a functional form that generally decreases along a direction away from the edge of the primary blocking junction (230). The width wjte is less than or equal to a multiple of five times the width of the one- dimensional depletion width (Wdepi ID), and the charge tolerance of the semiconductor device is greater than 1.0 xl013 per cm2.

公开(公告)号：CA2829245A1

公开(公告)日：2014-06-18

申请号：CA2829245

申请日：2013-10-03

Applicant: GEN ELECTRIC

Inventor： STUM ZACHARY MATTHEW ,  GHANDI REZA

IPC: H01L21/283 ,  H01L29/45

Abstract: A silicon carbide device is presented that includes a gate electrode disposed over a portion of a silicon carbide substrate as well as a dielectric film disposed over the gate electrode. The device has a contact region disposed near the gate electrode and has a layer disposed over the dielectric film and over the contact region. The layer includes nickel in portions disposed over the dielectric film and includes nickel silicide in portions disposed over the contact region. The nickel silicide layer is configured to provide an ohmic contact to the contact region of the silicon carbide device.

公开(公告)号：ITMI20112275A1

公开(公告)日：2012-06-18

申请号：ITMI20112275

申请日：2011-12-15

Applicant: GEN ELECTRIC

Inventor： ARTHUR STEPHEN DALEY ,  LOSEE PETER ALMERN ,  MATOCHA KEVIN SEAN ,  STUM ZACHARY MATTHEW