公开(公告)号：WO2008045609A2

公开(公告)日：2008-04-17

申请号：PCT/US2007073644

申请日：2007-07-17

Applicant: GEN ELECTRIC ,  ZRIBI ANIS ,  SHIH MIN-YI ,  SONG GUIJU ,  ACHUTAN AJIT ,  CLAYDON GLENN SCOTT ,  KENNERLY STACEY JOY ,  KISHORE KUNA VENKAT SATYA RAMA ,  ZHENG JIANMING ,  HARDING KEVIN GEORGE ,  XIA HUA

Inventor： ZRIBI ANIS ,  SHIH MIN-YI ,  SONG GUIJU ,  ACHUTAN AJIT ,  CLAYDON GLENN SCOTT ,  KENNERLY STACEY JOY ,  KISHORE KUNA VENKAT SATYA RAMA ,  ZHENG JIANMING ,  HARDING KEVIN GEORGE ,  XIA HUA

IPC: G01D5/353 ,  G01N17/00 ,  G01N21/45

CPC classification number: G01D5/35303 ,  G01D5/268 ,  G01N17/008 ,  G01N21/45 ,  G01N21/8422 ,  G01N2021/458 ,  G01N2021/9546

Abstract: A interferometer-based fouling detection system and method are described. The system may include a fiber optic cable, a light source in communication with the fiber optic cable, at least one photo detector in communication with the fiber optic cable, and at least one interferometric spectrometer. The fiber optic cable may include a long period grating and a fiber Bragg grating or it may include a facet edge. The system may instead include a fiber optic cable, a light source in communication with the fiber optic cable, at least one photo detector in communication with the fiber optic cable, a fiber coupler, a reference probe including a mirror, a sample probe, and an interferometer.

Abstract translation: 描述了基于干涉仪的结垢检测系统和方法。 该系统可以包括光纤电缆，与光纤电缆通信的光源，与光纤电缆通信的至少一个光电检测器，以及至少一个干涉光谱仪。 光纤电缆可以包括长周期光栅和光纤布拉格光栅，或者它可以包括小面边缘。 该系统可以替代地包括光纤电缆，与光纤电缆通信的光源，与光纤电缆通信的至少一个光电检测器，光纤耦合器，包括镜子的参考探针，样本探针和 干涉仪。

公开(公告)号：NO20081430A

公开(公告)日：2008-04-30

申请号：NO20081430

申请日：2008-03-18

Applicant: GEN ELECTRIC

Inventor： GREENWOOD JOHN CHRISTOPHER ,  SUBRAMANIAN KANAKASABAPATHI ,  KISHORE KUNA VENKAT SATYA RAMA ,  THAKRE PARAG ,  CRADDOCK RUSSELL WILLIAM ,  KINNELL PETER KEN

IPC: G01L9/00

CPC classification number: G01L9/0019

公开(公告)号：CA2688117A1

公开(公告)日：2010-06-22

申请号：CA2688117

申请日：2009-12-10

Applicant: GEN ELECTRIC

Inventor： WANG XUEFENG ,  CORWIN ALEX DAVID ,  LI BO ,  SUBRAMANIAN KANAKASABAPATHI ,  KISHORE KUNA VENKAT SATYA RAMA

IPC: B81B3/00 ,  B81B7/02

Abstract: A micro electro-mechanical system switch having an electrical pathway is presented. The switch includes a first portion and a second portion. The second portion is offset to a zero overlap position with respect to the first portion when the switch is in open position (or in the closed position depending on the switch architecture). The switch further includes an actuator for moving the first portion and the second portion into contact.

公开(公告)号：DE602007004416D1

公开(公告)日：2010-03-11

申请号：DE602007004416

申请日：2007-11-26

Applicant: GEN ELECTRIC

Inventor： WRIGHT JOSHUA ISAAC ,  SUBRAMANIAN KANAKASABAPATHI ,  PREMERLANI WILLIAM JAMES ,  PARK JOHN NORTON ,  KISHORE KUNA VENKAT SATYA RAMA

IPC: H01H1/00

Abstract: MEMS-based switching module (e.g., 12, 100), as may be electrically connected to other such modules (14, 16) in a series circuit, to achieve a desired voltage rating is provided. A switching array (10) may be made up of a plurality of such switching modules (e.g., used as building blocks of the switching array) with circuitry (100, 106, 108, 110) configured so that any number of modules can be connected in series to achieve the desired voltage rating (e.g., voltage scalability).

公开(公告)号：DE602008005244D1

公开(公告)日：2011-04-14

申请号：DE602008005244

申请日：2008-12-11

Applicant: GEN ELECTRIC

Inventor： WANG XUEFENG ,  SUBRAMANIAN KANAKASABAPATHI ,  KEIMEL CHRISTOPHER FRED ,  AIMI MARCO FRANCESCO ,  KISHORE KUNA VENKAT SATYA RAMA ,  CLAYDON GLENN SCOTT ,  BOOMHOWER OLIVER CHARLES ,  THAKRE PARAG

IPC: H01H59/00

公开(公告)号：CA2510618A1

公开(公告)日：2005-12-29

申请号：CA2510618

申请日：2005-06-23

Applicant: GEN ELECTRIC

Inventor： KANDE MALLIKARJUN SHIVARAYA ,  ANBARASU RAMASAMY ,  KOTTISA VIDYADHAR ,  MOGAVEERA RAJU ,  KISHORE KUNA VENKAT SATYA RAMA ,  VIJAYAN PRADEEP ,  DAVENPORT DAVID MICHAEL ,  GORAY KUNAL RAVINDRA

IPC: B61L29/08 ,  B61L29/16 ,  E01F13/00

Abstract: An electronically controlled grade crossing gate system (20) and method. The system includes a gate arm (12), a gate arm moving assembly (62), a position sensor assembly (92) and a controller (122). The gate arm moving assembly is configured to move the gate arm and the position sensor assembly is configured to sense a position of the gate arm. The position sensor assembly is a non-contact position sens or assembly. The controller is coupled to the gate arm moving assembly and the position sensor assembly and it is configured to receive an incoming command related to the gate arm. The controller activates the gate arm moving assemb ly in response to the incoming command and communicates with the position sensor assembly to monitor the position of the gate arm.

公开(公告)号：CA2872941C

公开(公告)日：2021-03-30

申请号：CA2872941

申请日：2013-05-15

Applicant: GEN ELECTRIC

Inventor： ARTHUR STEPHEN DALEY ,  BOLOTNIKOV ALEXANDER VIKTOROVICH ,  LOSEE PETER ALMERN ,  MATOCHA KEVIN SEAN ,  SAIA RICHARD JOSEPH ,  STUM ZACHARY MATTHEW ,  STEVANOVIC LJUBISA DRAGOLJUB ,  KISHORE KUNA VENKAT SATYA RAMA ,  KRETCHMER JAMES WILLIAM

IPC: H01L29/861 ,  H01L21/266 ,  H01L29/06 ,  H01L29/16 ,  H01L29/739 ,  H01L29/78

Abstract: A semiconductor device (200) is provided and includes a substrate (202) comprising silicon carbide; a drift layer (214) disposed over the substrate and comprising a drift region (214) doped with a first (n-type) dopant type, so as to have a first conductivity type; and a second region (216) adjacent to the drift region and proximal to a surface (204) of the drift layer. The second region is doped with a second (p-type) dopant type, so as to have a second conductivity type. The semiconductor device further includes a junction termination extension (JTE) (220) disposed adjacent to the second (well) region. The JTE has a width Wjte and comprises a number of discrete regions (221) separated in a first direction and in a second direction and doped with varying concentrations of the second (p-type) dopant type, so as to have an effective doping profile of the second conductivity type of a functional form that generally decreases along a direction away from the edge of the primary blocking junction (230). The width wjte is less than or equal to a multiple of five times the width of the one- dimensional depletion width (Wdepi ID), and the charge tolerance of the semiconductor device is greater than 1.0 xl013 per cm2.

公开(公告)号：CA2872941A1

公开(公告)日：2013-11-21

申请号：CA2872941

申请日：2013-05-15

Applicant: GEN ELECTRIC

Inventor： ARTHUR STEPHEN DALEY ,  BOLOTNIKOV ALEXANDER VIKTOROVICH ,  LOSEE PETER ALMERN ,  MATOCHA KEVIN SEAN ,  SAIA RICHARD JOSEPH ,  STUM ZACHARY MATTHEW ,  STEVANOVIC LJUBISA DRAGOLJUB ,  KISHORE KUNA VENKAT SATYA RAMA ,  KRETCHMER JAMES WILLIAM

IPC: H01L29/861 ,  H01L21/266 ,  H01L29/06 ,  H01L29/16 ,  H01L29/739 ,  H01L29/78

Abstract: A semiconductor device (200) is provided and includes a substrate (202) comprising silicon carbide; a drift layer (214) disposed over the substrate and comprising a drift region (214) doped with a first (n-type) dopant type, so as to have a first conductivity type; and a second region (216) adjacent to the drift region and proximal to a surface (204) of the drift layer. The second region is doped with a second (p-type) dopant type, so as to have a second conductivity type. The semiconductor device further includes a junction termination extension (JTE) (220) disposed adjacent to the second (well) region. The JTE has a width Wjte and comprises a number of discrete regions (221) separated in a first direction and in a second direction and doped with varying concentrations of the second (p-type) dopant type, so as to have an effective doping profile of the second conductivity type of a functional form that generally decreases along a direction away from the edge of the primary blocking junction (230). The width wjte is less than or equal to a multiple of five times the width of the one- dimensional depletion width (Wdepi ID), and the charge tolerance of the semiconductor device is greater than 1.0 xl013 per cm2.

公开(公告)号：MX2008013944A

公开(公告)日：2009-05-26

申请号：MX2008013944

申请日：2008-10-30

Applicant: GEN ELECTRIC

Inventor： SUBRAMANIAN KANAKASABAPATHI ,  KUMFER BRENT CHARLES ,  KISHORE KUNA VENKAT SATYA RAMA ,  PARK JOHN ,  PREMERIANI WILLIAM JAMES ,  SCHELENZ OWEN

IPC: H01H19/64

Abstract: Se describe un dispositivo (10) de control de corriente. El dispositivo (10) de control de corriente incluye circuitería (72) de corriente arreglado en forma integrada con una trayectoria de corriente y por lo menos un par (21) de interruptor del sistema micro-electromécanico (MEMS) dispuesto en la trayectoria de corriente. El dispositivo (10) de control de corriente también incluye un circuito (14) de tecnología limitante sin arco híbrido (HALT) conectado en paralelo con por lo menos un par (21) de interruptor MEMS que facilita la apertura del por lo menos un par (21) de interruptores MEMS.

公开(公告)号：CA2645834A1

公开(公告)日：2009-06-20

申请号：CA2645834

申请日：2008-12-04

Applicant: GEN ELECTRIC

Inventor： WANG XUEFENG ,  THAKRE PARAG ,  BOOMHOVER OLIVER CHARLES ,  SUBRAMANIAN KANAKASABAPATHI ,  KISHORE KUNA VENKAT SATYA RAMA ,  AIMI MARCO FRANCESCO ,  CLAYDON GLENN SCOTT ,  KEIMEL CHRISTOPHER FRED

IPC: B81B3/00 ,  B81B7/02 ,  B81B7/04

Abstract: A MEMS switch (30, 50, 60, 70, 80) includes a substrate (32), a movable actuator (53, 63, 83) coupled to the substrate (32), a substrate contact (35 , 85), a substrate electrode (36, 56, 86), and a conductive stopper (39, 59, 69, 79) electrically coupled to the movable actuator (33, 63, 83) and structured to prevent the movable actuator (33, 63, 83) from contacting the substrate electrode (36, 56, 86) while allowing the movable actuator (33, 63, 83) to make contact with the substrat e contact (35, 85).