公开(公告)号：EP4553902A1

公开(公告)日：2025-05-14

申请号：EP24172309.7

申请日：2024-04-25

Applicant: GlobalFoundries U.S. Inc.

Inventor： NATH, Anindya ,  RAGHUNATHAN, Uppili S. ,  KRISHNASAMY, Rajendran ,  KARALKAR, Sagar Premnath ,  DERRICKSON, Alexander M. ,  JAIN, Vibhor

IPC: H01L27/02 ,  H01L29/66 ,  H01L29/74

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a silicon control rectifier (SCR) and methods of manufacture. The structure includes: a doped region in a semiconductor substrate; at least two regions of semiconductor material comprising opposite doping types over the doped region; and polysilicon regions over respective ones of the least two regions of semiconductor material.

公开(公告)号：EP4525048A1

公开(公告)日：2025-03-19

申请号：EP24160165.7

申请日：2024-02-28

Applicant: GlobalFoundries U.S. Inc.

Inventor： DERRICKSON, Alexander M. ,  SHANBHAG, Kaustubh ,  JAIN, Vibhor ,  HOLT, Judson R.

IPC: H01L29/10 ,  H01L21/331 ,  H01L29/737 ,  H01L29/08 ,  H01L29/73 ,  H01L29/06

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to bipolar transistors and methods of manufacture. The structure includes: a collector; a base region above the collector; an emitter laterally connecting to the base region; and an extrinsic base connecting to the base region.

公开(公告)号：EP4160695A1

公开(公告)日：2023-04-05

申请号：EP22198237.4

申请日：2022-09-28

Applicant: GlobalFoundries U.S. Inc.

Inventor： YU, Hong ,  HOLT, Judson R. ,  DERRICKSON, Alexander M.

IPC: H01L29/735 ,  H01L21/331 ,  H01L29/165 ,  H01L29/06 ,  H01L27/07 ,  H01L27/06 ,  H01L29/08 ,  H01L29/10

Abstract: Embodiments of the disclosure provide a bipolar transistor structure on a semiconductor fin. The semiconductor fin may be on a substrate and may have a first doping type, a length in a first direction, and a width in a second direction perpendicular to the first direction. The semiconductor fin includes a first portion and a second portion adjacent the first portion along the length of the semiconductor fin. The second portion is coupled to a base contact. A dopant concentration of the first portion is less than a dopant concentration of the second portion. An emitter/collector (E/C) material is adjacent the first portion along the width of the semiconductor fin. The E/C material has a second doping type opposite the first doping type. The E/C material is coupled to an E/C contact.