公开(公告)号：EP4343394A1

公开(公告)日：2024-03-27

申请号：EP23189909.7

申请日：2023-08-07

Applicant: GlobalFoundries U.S. Inc.

Inventor： BIAN, Yusheng ,  LEE, Won Suk

IPC: G02B6/12 ,  G02B6/122

Abstract: Structures for an optical coupler and methods of forming a structure for an optical coupler. The structure comprises a stacked waveguide core including a first waveguide core and a second waveguide core. The first waveguide core includes a first tapered section, and the second waveguide core includes a second tapered section positioned to overlap with the first tapered section. The structure further comprises a third waveguide core including a third tapered section positioned adjacent to the first tapered section of the first waveguide core and the second tapered section of the second waveguide core.

公开(公告)号：EP4550015A1

公开(公告)日：2025-05-07

申请号：EP24170916.1

申请日：2024-04-18

Applicant: GlobalFoundries U.S. Inc.

Inventor： BIAN, Yusheng ,  STRICKER, Andreas D. ,  ABOKETAF, Abdelsalam ,  HOLT, Judson R. ,  DEZFULIAN, Kevin K. ,  GIEWONT, Kenneth J. ,  DERRICKSON, Alexander ,  LEE, Won Suk ,  CHANDRAN, Sujith ,  SPORER, Ryan W. ,  LIN, Teng-Yin

IPC: G02B6/12 ,  G02B6/122

Abstract: Structures for a photonics chip that include a photodetector and methods of forming such structures. The structure comprises a photodetector that is disposed on a substrate and that includes a light-absorbing layer. The light-absorbing layer includes a sidewall and a notch in the sidewall. The structure further comprises a waveguide core including a section adjacent to the notch in the sidewall of the light-absorbing layer.

公开(公告)号：EP4468070A1

公开(公告)日：2024-11-27

申请号：EP23209945.7

申请日：2023-11-15

Applicant: GlobalFoundries U.S. Inc.

Inventor： CHANDRAN, Sujith ,  BIAN, Yusheng ,  LEE, Won Suk

IPC: G02F1/01 ,  G02F1/025

Abstract: Structures for a thermo-optic phase shifter and methods of forming a thermo-optic phase shifter. The structure comprises a semiconductor substrate, and a heater including a first resistive heating element, a second resistive heating element, and a slab layer connecting the first resistive heating element to the second resistive heating element. The first resistive heating element and the second resistive heating element have a first thickness, and the slab layer has a second thickness that is less than the first thickness. The structure further comprises a waveguide core including a portion that is laterally positioned between the first resistive heating element and the second resistive heating element. The slab layer of the heater is disposed between the portion of the waveguide core and the semiconductor substrate.