公开(公告)号：EP4550015A1

公开(公告)日：2025-05-07

申请号：EP24170916.1

申请日：2024-04-18

Applicant: GlobalFoundries U.S. Inc.

Inventor： BIAN, Yusheng ,  STRICKER, Andreas D. ,  ABOKETAF, Abdelsalam ,  HOLT, Judson R. ,  DEZFULIAN, Kevin K. ,  GIEWONT, Kenneth J. ,  DERRICKSON, Alexander ,  LEE, Won Suk ,  CHANDRAN, Sujith ,  SPORER, Ryan W. ,  LIN, Teng-Yin

IPC: G02B6/12 ,  G02B6/122

Abstract: Structures for a photonics chip that include a photodetector and methods of forming such structures. The structure comprises a photodetector that is disposed on a substrate and that includes a light-absorbing layer. The light-absorbing layer includes a sidewall and a notch in the sidewall. The structure further comprises a waveguide core including a section adjacent to the notch in the sidewall of the light-absorbing layer.

公开(公告)号：EP4383357A1

公开(公告)日：2024-06-12

申请号：EP23199267.8

申请日：2023-09-25

Applicant: GlobalFoundries U.S. Inc.

Inventor： DERRICKSON, Alexander ,  RAGHUNATHAN, Uppili S. ,  JAIN, Vibhor ,  BIAN, Yusheng ,  HOLT, Judson R.

IPC: H01L31/11 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/0232 ,  H01L31/0224

CPC classification number: H01L31/1105 ,  H01L31/028 ,  H01L31/02327 ,  H01L31/035281 ,  H01L31/022408

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to lateral phototransistors and methods of manufacture. The structure includes a lateral bipolar transistor (12); and a T-shaped photosensitive structure (20) vertically above an intrinsic base (12d) of the lateral bipolar transistor.

公开(公告)号：EP4373237A1

公开(公告)日：2024-05-22

申请号：EP23198101.0

申请日：2023-09-19

Applicant: GlobalFoundries U.S. Inc.

Inventor： DERRICKSON, Alexander ,  GOPINATH, Venkatesh ,  PEKARIK, John J. ,  YU, Hong ,  JAIN, Vibhor ,  PRITCHARD, David

IPC: H10B63/00 ,  H01L27/102 ,  H10B61/00 ,  H10N70/20 ,  H10N70/00

CPC classification number: H10B63/32 ,  H10B61/20 ,  H10B63/80 ,  H10N70/20 ,  H10N70/826 ,  H10N70/883 ,  H10N70/8833 ,  H01L27/1022

Abstract: Structures that include bipolar junction transistors and methods of forming such structures. The structure comprises a semiconductor layer, a substrate (32), and a dielectric layer disposed between the semiconductor layer and the substrate. The structure further comprises a first bipolar junction transistor (12) including a first collector in the substrate (34), a first emitter (40), and a first base layer (20). The first base layer extends through the dielectric layer from the first emitter to the first collector. The structure further comprises a second bipolar junction transistor (14) including a second collector (34) in the substrate, a second emitter (42), and a second base layer (22). The second base layer extends through the dielectric layer from the second emitter to the second collector. The second base layer is connected to the first base layer by a section of the semiconductor layer to define a base line.

公开(公告)号：EP4373236A1

公开(公告)日：2024-05-22

申请号：EP23197829.7

申请日：2023-09-18

Applicant: GlobalFoundries U.S. Inc.

Inventor： PEKARIK, John J. ,  YU, Hong ,  JAIN, Vibhor ,  DERRICKSON, Alexander ,  GOPINATH, Venkatesh

IPC: H10B63/00 ,  H01L27/102 ,  H10B61/00 ,  H10N70/20 ,  H10N70/00

CPC classification number: H10B63/32 ,  H10N70/826 ,  H10B61/20 ,  H10B63/80 ,  H10N70/20 ,  H10N70/883 ,  H10N70/8833 ,  H01L27/1022

Abstract: Structures that include bipolar junction transistors and methods of forming such structures. The structure (10) comprises a substrate (32) having a top surface, a trench isolation region (24) in the substrate, and a base layer (20) on the top surface of the substrate. The base layer extending across the trench isolation region. A first bipolar junction transistor (12) includes a first collector (34) in the substrate and a first emitter (40) on a first portion of the first base layer. The first portion of the first base layer is positioned between the first collector and the first emitter. A second bipolar junction transistor (16) includes a second collector (36) in the substrate and a second emitter (44) on a second portion of the first base layer. The second portion of the first base layer is positioned between the second collector and the second emitter.