公开(公告)号：US20180050902A1

公开(公告)日：2018-02-22

申请号：US15554653

申请日：2015-12-14

Applicant: Goertek.Inc

Inventor： Yanmei SUN

IPC: B81B7/02 ,  H04R31/00 ,  H04R19/04 ,  H04R19/00 ,  B81C1/00 ,  G01L7/08

CPC classification number: B81B7/02 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C1/00158 ,  B81C2201/0105 ,  B81C2201/013 ,  G01L7/08 ,  H04R19/005 ,  H04R19/04 ,  H04R31/00 ,  H04R2201/003

Abstract: The present invention discloses a manufacturing method of an integrated structure of a MEMS microphone and a pressure sensor, which comprises the following steps: depositing an insulating layer, a first polycrystalline silicon layer, a sacrificial layer and a second polycrystalline silicon layer in sequence on a shared substrate; etching the second polycrystalline silicon layer to form a vibrating diaphragm and an upper electrode; eroding the sacrificial layer to form a containing cavity of a microphone and a pressure sensor, and etching the sacrificial layer between the microphone and the pressure sensor; etching the first polycrystalline silicon layer to form a back electrode of the microphone and a lower electrode of the pressure sensor; etching a position of the shared substrate below a back electrode of the microphone to form a back cavity; and etching away the region of the insulating layer below the back electrode. A capacitance structure of a MEMS microphone and that of a pressure sensor are integrated on a shared substrate, improving integration of a MEMS microphone and a pressure sensor, and greatly reducing a size of a whole packaging structure; in addition, a microphone and a pressure sensor can be simultaneously manufactured on a shared substrate to improve the efficiency of production.