8.
    发明专利
    未知

    公开(公告)号:DE59602394D1

    公开(公告)日:1999-08-12

    申请号:DE59602394

    申请日:1996-03-15

    Applicant: HOECHST AG

    Abstract: The invention concerns a method of coating a base with a plasma-sprayed layer with a spray powder contained in the molten state in the plasma. In the proposed process, the powder is introduced via powder feed ducts in the vicinity of the neutrode(s) or anode(s) or between the two into a channel of a plasma spray device, at least one arc being at least 20 mm in length at least some of the time and the base to be coated being a so-called continuous strip or large-surface unit of at least 0.005 m . The invention also concerns a device for coating a base, comprising a number of plasma spray devices and at least one noise-protection cabinet; the plasma spray devices each comprise at least one neutrode and at least one anode for producing an arc of at least 20 mm in length and for heating a spray powder. The spray powder is introduced in the vicinity of the anode(s) or neutrode(s) and/or between the two, and the device is provided with a device for micro-roughing the article in the form of a mechanical, physical or radiation micro-roughing unit.

    10.
    发明专利
    未知

    公开(公告)号:AT107345T

    公开(公告)日:1994-07-15

    申请号:AT90904815

    申请日:1990-03-21

    Applicant: HOECHST AG

    Abstract: PCT No. PCT/EP90/00458 Sec. 371 Date Nov. 6, 1991 Sec. 102(e) Date Nov. 6, 1991 PCT Filed Mar. 21, 1990 PCT Pub. No. WO90/11336 PCT Pub. Date Oct. 4, 1990.The novel liquid-crystalline mixtures (in the case of ferroelectric behavior they additionally contain an optically active compound as dope) are based on at least two mixture components of the general formula (I) and at least one carboxylate of the general formula (II), (III) or (IV). (* CHEMICAL STRUCTURE *) (I) (* CHEMICAL STRUCTURE *) (II) X = O or a single bond (* CHEMICAL STRUCTURE *) (III) (* CHEMICAL STRUCTURE *) (IV) The mixtures have favorable properties for use in electrooptical display elements, such as high contrast, low melting point and short switching times.

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