Abstract:
A material may include grains of sizes such that at least 99 % of a measured area contains grains that exhibit grain areas less than 10 times an area of a mean grain size of the measured area. As examples, at least 99 % of the measured area may contain grains with grain areas less than 8, 6, or 3 times the area of the mean grain size. The grains may also have a mean grain size of less than 3 times a minimum statically recrystallized grain size, for example, a mean grain size less than about 50 microns, 10 microns, or 1 micron. The material may be comprised by a sputtering target and a thin film may be deposited on a substrate from such a sputtering target. A micro-are reduction method may include sputtering a film from a sputtering target comprising grains of sizes as described. A sputtering target forming method may include deforming a sputtering material. After the deforming, the sputtering material may be shaped into at least a portion of a sputtering target. The sputtering target may include grains of sizes as described. Also, the deforming may induce a strain level corresponding to epsilon of at least about 4. Further, the deforming may include equal channel angular extrusion.
Abstract:
The invention includes the use of a high-modulus fiber metal matrix composite material as a backing plate (10) for physical vapor deposition targets, as a lid for microelectronics packages, as a heat spreader, and as a heat sink. In one implementation, copper-coated carbon fibers (16) are mixed with copper powder. In another implementation, the mixture is consolidated to a carbon fiber metal matrix composite by using a vacuum hot press. The resultant backing plate has a coefficient of thermal expansion of 4.9 x 10 /C, thermal conductivity of at least 300 W/mK, density of greater than 99% of theoretical, and the composite material of the backing plate is 30% lighter than Cu while also having higher stiffness than Cu. The high-modulus fiber metal matrix composite backing plate can be used for high power W, Ta, and ceramic PVD targets.
Abstract:
The invention comprises ferroelectric vapor deposition targets and to methods of making ferroelectric vapor deposition targets. In one implementation, a ferroelectric physical vapor deposition target has a predominate grain size of less than or equal to 1.0 micron, and has a density of at least 95% of maximum theoretical density. In one implementation, a method of making a ferroelectric physical vapor deposition target includes positioning a prereacted ferroelectric powder within a hot press cavity. The prereacted ferroelectric powder predominately includes individual prereacted ferroelectric particles having a maximum straight linear dimension of less than or equal to about 100 nanometers. The prereacted ferroelectric powder is hot pressed within the cavity into a physical vapor deposition target of desired shape having a density of at least about 95% of maximum theoretical density and a predominate maximum grain size which is less than or equal to 1.0 micron. In one implementation, the prereacted ferroelectric powder is hot pressed within the cavity into a physical vapor deposition target of desired shape at a maximum pressing temperature which is at least 200° C. lower than would be required to produce a target of a first density of at least 85% of maximum theoretical density in hot pressing the same powder but having a predominate particle size maximum straight linear dimension of at least 1.0 micron at the same pressure and for the same amount of time, and a target density greater than the first density at the lower pressing temperature is achieved.
Abstract:
The invention includes the use of a high-modulus fiber metal matrix composite material as a backing plate for physical vapor deposition targets, as a lid for microelectronics packages, as a heat spreader, and as a heat sink. In one implementation, copper-coated carbon fibers are mixed with copper powder. In another implementation, the mixture is consolidated to a carbon fiber metal matrix composite by using a vacuum hot press. The resultant backing plate has a coefficient of thermal expansion of 4.9x10 /C, thermal conductivity of at least 300 W/mK, density of greater than 99% of theoretical, and the composite material of the backing plate is 30% lighter than Cu while also having higher stiffness than Cu. The high-modulus fiber metal matrix composite backing plate can be used for high power W, Ta, and ceramic PVD targets.