SPUTTERING TARGET
    1.
    发明申请
    SPUTTERING TARGET 审中-公开
    飞溅目标

    公开(公告)号:WO0194660A3

    公开(公告)日:2002-05-30

    申请号:PCT/US0117798

    申请日:2001-05-31

    CPC classification number: C23C14/3414 B21C23/001

    Abstract: A material may include grains of sizes such that at least 99 % of a measured area contains grains that exhibit grain areas less than 10 times an area of a mean grain size of the measured area. As examples, at least 99 % of the measured area may contain grains with grain areas less than 8, 6, or 3 times the area of the mean grain size. The grains may also have a mean grain size of less than 3 times a minimum statically recrystallized grain size, for example, a mean grain size less than about 50 microns, 10 microns, or 1 micron. The material may be comprised by a sputtering target and a thin film may be deposited on a substrate from such a sputtering target. A micro-are reduction method may include sputtering a film from a sputtering target comprising grains of sizes as described. A sputtering target forming method may include deforming a sputtering material. After the deforming, the sputtering material may be shaped into at least a portion of a sputtering target. The sputtering target may include grains of sizes as described. Also, the deforming may induce a strain level corresponding to epsilon of at least about 4. Further, the deforming may include equal channel angular extrusion.

    Abstract translation: 材料可以包括尺寸使得测量面积的至少99%含有表现出小于测量区域的平均粒度的面积的10倍的颗粒的颗粒。 作为实例,测量面积的至少99%可以含有晶粒面积小于平均晶粒尺寸面积的8,6或3倍的晶粒。 颗粒的平均粒度也可以小于最小静态再结晶晶粒尺寸的3倍,例如,平均粒度小于约50微米,10微米或1微米。 该材料可以由溅射靶材组成,并且薄膜可以从这样的溅射靶材沉积在衬底上。 微观还原方法可以包括从包括如上所述尺寸的晶粒的溅射靶溅射膜。 溅射靶的形成方法可以包括使溅射材料变形。 在变形之后,溅射材料可以被成形为溅射靶的至少一部分。 溅射靶可以包括如上所述的尺寸的晶粒。 此外,变形可以引起对应于至少约4的ε的应变水平。此外,变形可以包括相等的通道角挤压。

    FIBER-METAL-MATRIX COMPOSITE FOR PHYSICAL VAPOR DEPOSITION TARGET BACKING PLATES
    2.
    发明申请
    FIBER-METAL-MATRIX COMPOSITE FOR PHYSICAL VAPOR DEPOSITION TARGET BACKING PLATES 审中-公开
    用于物理蒸气沉积的纤维 - 金属基复合材料目标支撑板

    公开(公告)号:WO0192594A3

    公开(公告)日:2002-03-21

    申请号:PCT/US0140765

    申请日:2001-05-18

    Abstract: The invention includes the use of a high-modulus fiber metal matrix composite material as a backing plate (10) for physical vapor deposition targets, as a lid for microelectronics packages, as a heat spreader, and as a heat sink. In one implementation, copper-coated carbon fibers (16) are mixed with copper powder. In another implementation, the mixture is consolidated to a carbon fiber metal matrix composite by using a vacuum hot press. The resultant backing plate has a coefficient of thermal expansion of 4.9 x 10 /C, thermal conductivity of at least 300 W/mK, density of greater than 99% of theoretical, and the composite material of the backing plate is 30% lighter than Cu while also having higher stiffness than Cu. The high-modulus fiber metal matrix composite backing plate can be used for high power W, Ta, and ceramic PVD targets.

    Abstract translation: 本发明包括使用高模量纤维金属基复合材料作为物理气相沉积靶的背板(10),作为微电子封装的盖子,作为散热器,以及作为散热器。 在一个实施方案中,将铜包覆的碳纤维(16)与铜粉末混合。 在另一个实施方案中,通过使用真空热压机将混合物固结成碳纤维金属基质复合材料。 得到的背板的热膨胀系数为4.9×10 -6 /℃,导热率至少为300W / mK,密度大于理论值的99%,背板的复合材料为30 比Cu轻,同时具有比Cu更高的刚度。 高模量纤维金属基复合背板可用于大功率W,Ta和陶瓷PVD靶。

    Ferroelectric composition, ferroelectric vapor deposition target and method of making a ferroelectric vapor deposition target

    公开(公告)号:AU2727201A

    公开(公告)日:2001-06-25

    申请号:AU2727201

    申请日:2000-12-14

    Abstract: The invention comprises ferroelectric vapor deposition targets and to methods of making ferroelectric vapor deposition targets. In one implementation, a ferroelectric physical vapor deposition target has a predominate grain size of less than or equal to 1.0 micron, and has a density of at least 95% of maximum theoretical density. In one implementation, a method of making a ferroelectric physical vapor deposition target includes positioning a prereacted ferroelectric powder within a hot press cavity. The prereacted ferroelectric powder predominately includes individual prereacted ferroelectric particles having a maximum straight linear dimension of less than or equal to about 100 nanometers. The prereacted ferroelectric powder is hot pressed within the cavity into a physical vapor deposition target of desired shape having a density of at least about 95% of maximum theoretical density and a predominate maximum grain size which is less than or equal to 1.0 micron. In one implementation, the prereacted ferroelectric powder is hot pressed within the cavity into a physical vapor deposition target of desired shape at a maximum pressing temperature which is at least 200° C. lower than would be required to produce a target of a first density of at least 85% of maximum theoretical density in hot pressing the same powder but having a predominate particle size maximum straight linear dimension of at least 1.0 micron at the same pressure and for the same amount of time, and a target density greater than the first density at the lower pressing temperature is achieved.

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