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    SPUTTERING TARGET
    1.
    发明申请
    SPUTTERING TARGET 审中-公开
    飞溅目标

    公开(公告)号：WO0194660A3

    公开(公告)日：2002-05-30

    申请号：PCT/US0117798

    申请日：2001-05-31

    Applicant: HONEYWELL INT INC ,  SEGAL VLADIMIR ,  THOMAS MICHAEL ,  LI JIANXING ,  FERRASSE STEPHANE ,  ALFORD FRANK ,  SCOTT TIM ,  TURNER STEPHEN

    Inventor： SEGAL VLADIMIR ,  THOMAS MICHAEL ,  LI JIANXING ,  FERRASSE STEPHANE ,  ALFORD FRANK ,  SCOTT TIM ,  TURNER STEPHEN

    IPC: C23C14/34 ,  B22F1/00

    CPC classification number: C23C14/3414 ,  B21C23/001

    Abstract: A material may include grains of sizes such that at least 99 % of a measured area contains grains that exhibit grain areas less than 10 times an area of a mean grain size of the measured area. As examples, at least 99 % of the measured area may contain grains with grain areas less than 8, 6, or 3 times the area of the mean grain size. The grains may also have a mean grain size of less than 3 times a minimum statically recrystallized grain size, for example, a mean grain size less than about 50 microns, 10 microns, or 1 micron. The material may be comprised by a sputtering target and a thin film may be deposited on a substrate from such a sputtering target. A micro-are reduction method may include sputtering a film from a sputtering target comprising grains of sizes as described. A sputtering target forming method may include deforming a sputtering material. After the deforming, the sputtering material may be shaped into at least a portion of a sputtering target. The sputtering target may include grains of sizes as described. Also, the deforming may induce a strain level corresponding to epsilon of at least about 4. Further, the deforming may include equal channel angular extrusion.

    Abstract translation: 材料可以包括尺寸使得测量面积的至少99％含有表现出小于测量区域的平均粒度的面积的10倍的颗粒的颗粒。 作为实例，测量面积的至少99％可以含有晶粒面积小于平均晶粒尺寸面积的8,6或3倍的晶粒。 颗粒的平均粒度也可以小于最小静态再结晶晶粒尺寸的3倍，例如，平均粒度小于约50微米，10微米或1微米。 该材料可以由溅射靶材组成，并且薄膜可以从这样的溅射靶材沉积在衬底上。 微观还原方法可以包括从包括如上所述尺寸的晶粒的溅射靶溅射膜。 溅射靶的形成方法可以包括使溅射材料变形。 在变形之后，溅射材料可以被成形为溅射靶的至少一部分。 溅射靶可以包括如上所述的尺寸的晶粒。 此外，变形可以引起对应于至少约4的ε的应变水平。此外，变形可以包括相等的通道角挤压。

    Sputtering target
    2.
    发明专利
    Sputtering target 未知

    公开(公告)号：AU7518401A

    公开(公告)日：2002-02-25

    申请号：AU7518401

    申请日：2001-05-31

    Applicant: HONEYWELL INT INC

    Inventor： LI JIANXING ,  TURNER STEPHEN ,  YAO LIJUN

    IPC: C22C14/00 ,  C23C14/34 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532

    Abstract: The invention describes herein relates to new titanium-comprising materials which can be utilized for forming titanium alloy sputtering targets. The titanium alloy sputtering targets can be reactively sputtered in a nitrogen-comprising sputtering atmosphere to form an alloy TiN film, or alternatively in a nitrogen-comprising and oxygen-comprising sputtering atmosphere to form an alloy TiON thin film. The thin films formed in accordance with the present invention can have a non-columnar grain structure, low electrical resistivity, high chemical stability, and barrier layer properties comparable to those of TaN for thin film Cu barrier applications. Further, the titanium alloy sputtering target materials produced in accordance with the present invention are more cost-effective for semiconductor applications than are high-purity tantalum materials and have superior mechanical strength suitable for high-power sputtering applications.

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