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公开(公告)号:ES2062972T3
公开(公告)日:1995-01-01
申请号:ES87103375
申请日:1987-03-10
Applicant: IBM
Inventor: ANDERSON HERBERT RUDOLF JR , DIVAKARUNI RENUKA SHASTRI , DYNYS JOSEPH MICHAEL , KANDETZKE STEVEN MICHAEL , KIRBY DANIEL PATRICK , MASTER RAJ NAVINCHANDRA , CASEY JON ALFRED
Abstract: The present invention provides a method for producing multilayered ceramic structures having copper-based conductors therein, wherein the onset of sintering of the copper-based conductor can be adjusted to approach or match that of the ceramic portion of the structure. In addition, methods are provided whereby the polymeric binder resin used in formation of the ceramic portion of the structure can be removed or burned-off, using oxygen-containing ambients, wherein the oxygen content is greater than 200 ppm, without oxidation of the copper-based conductors therein.
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公开(公告)号:BR8502757A
公开(公告)日:1986-02-18
申请号:BR8502757
申请日:1985-06-11
Applicant: IBM
IPC: H01L21/3205 , G03F7/039 , H01L21/027 , H01L21/302 , H01L21/306 , H01L21/3065 , H01L21/768 , H05K3/04 , H01L21/312 , H01L21/443
Abstract: An improved lift-off process for multilevel metal structure in the fabrication of integrated circuits by employing lift-off layer formed from polymers which undergo clean depolymerization under the influence of heat or radiation and allow rapid and residue-free release of an "expendable mask". An embedded interconnection metallurgy system is formed by application of the lift-off layer of this invention over a cured polymer film or on an oxygen RIE barrier layer previously deposited on organic or inorganic substrate, followed by another barrier over which is then coated a radiation sensitive resist layer. After definition of the desired resist pattern by imagewise exposure and development, the image is replicated into the barrier by sputter etching in a fluorine containing ambient and subsequently into the base layer down to the substrate by oxygen reactive ion etching which is followed by blanket metal evaporation and finally the lift-off by brief heat treatment at the depolymerization temperature of the lift-off layer, and brief solvent soak.
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