公开(公告)号：EP1719181A4

公开(公告)日：2010-08-25

申请号：EP04702191

申请日：2004-01-14

Applicant: IBM

Inventor： ANGYAL MATTHEW ,  HICHRI HABIB ,  LEE JIA ,  MCHERRON DALE ,  NYE HENRY A III

IPC: H01L29/00 ,  C23C16/40 ,  C23C16/455 ,  H01L21/316

CPC classification number: H01L21/31633 ,  C23C16/401 ,  C23C16/45523 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274

公开(公告)号：JP2011061228A

公开(公告)日：2011-03-24

申请号：JP2010247790

申请日：2010-11-04

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： FITZSIMMONS JOHN ,  GRECO STEPHEN ,  LEE JIA ,  GATES STEPHEN ,  SPOONER TERRY ,  ANGYAL MATTHEW ,  HICHRI HABIB ,  STANDAERT THEORDORUS ,  BIERY GLENN

IPC: H01L21/768 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76832 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76835 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide an advanced back-end-of-line (BEOL) interconnect structure provided with a hybrid dielectric body. SOLUTION: Inter layer dielectric body (ILD) for a via level is preferably different from an ILD for a line level. In a preferable embodiment, the ILD the via level is formed with a low-k SiCOH material, and the ILD for the line level is formed with a low-k polymer thermosetting material. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供具有混合电介质体的高级后端（BEOL）互连结构。 解决方案：用于通孔电平的层间电介质体（ILD）优选地不同于线路电平的ILD。 在优选的实施方案中，ILD通过低k SiCOH材料形成通孔层，并且用低k聚合物热固性材料形成线水平的ILD。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：AU2003279460A1

公开(公告)日：2004-06-03

申请号：AU2003279460

申请日：2003-11-07

Applicant: IBM

Inventor： HICHRI HABIB ,  STANDAERT THEORDORUS ,  BIERY GLENN ,  FITZSIMMONS JOHN ,  GRECO STEPHEN ,  LEE JIA ,  GATES STEPHEN ,  SPOONER TERRY ,  ANGYAL MATTHEW

IPC: H01L21/768 ,  H01L23/532

Abstract: An advanced back-end-of-line (BEOL) interconnect structure having a hybrid dielectric is disclosed. The inter-layer dielectric (ILD) for the via level is preferably different from the ILD for the line level. In a preferred embodiment, the via-level ILD is formed of a low-k SiCOH material, and the line-level ILD is formed of a low-k polymeric thermoset material.