公开(公告)号：EP1849183A4

公开(公告)日：2010-09-01

申请号：EP06735050

申请日：2006-02-14

Applicant: IBM ,  SONY CORP

Inventor： NGUYEN SON V ,  LANE SARAH L ,  LEE JIA ,  IDA KENSAKU ,  RESTAINO DARRYL D ,  NOGAMI TAKESHI

IPC: H01L21/31

CPC classification number: H01L21/7682 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02354 ,  H01L21/3122 ,  H01L21/31633 ,  H01L2221/1047

公开(公告)号：EP1719181A4

公开(公告)日：2010-08-25

申请号：EP04702191

申请日：2004-01-14

Applicant: IBM

Inventor： ANGYAL MATTHEW ,  HICHRI HABIB ,  LEE JIA ,  MCHERRON DALE ,  NYE HENRY A III

IPC: H01L29/00 ,  C23C16/40 ,  C23C16/455 ,  H01L21/316

CPC classification number: H01L21/31633 ,  C23C16/401 ,  C23C16/45523 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274

公开(公告)号：JP2011061228A

公开(公告)日：2011-03-24

申请号：JP2010247790

申请日：2010-11-04

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： FITZSIMMONS JOHN ,  GRECO STEPHEN ,  LEE JIA ,  GATES STEPHEN ,  SPOONER TERRY ,  ANGYAL MATTHEW ,  HICHRI HABIB ,  STANDAERT THEORDORUS ,  BIERY GLENN

IPC: H01L21/768 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76832 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76835 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide an advanced back-end-of-line (BEOL) interconnect structure provided with a hybrid dielectric body. SOLUTION: Inter layer dielectric body (ILD) for a via level is preferably different from an ILD for a line level. In a preferable embodiment, the ILD the via level is formed with a low-k SiCOH material, and the ILD for the line level is formed with a low-k polymer thermosetting material. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供具有混合电介质体的高级后端（BEOL）互连结构。 解决方案：用于通孔电平的层间电介质体（ILD）优选地不同于线路电平的ILD。 在优选的实施方案中，ILD通过低k SiCOH材料形成通孔层，并且用低k聚合物热固性材料形成线水平的ILD。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：AU2003279460A1

公开(公告)日：2004-06-03

申请号：AU2003279460

申请日：2003-11-07

Applicant: IBM

Inventor： HICHRI HABIB ,  STANDAERT THEORDORUS ,  BIERY GLENN ,  FITZSIMMONS JOHN ,  GRECO STEPHEN ,  LEE JIA ,  GATES STEPHEN ,  SPOONER TERRY ,  ANGYAL MATTHEW

IPC: H01L21/768 ,  H01L23/532

Abstract: An advanced back-end-of-line (BEOL) interconnect structure having a hybrid dielectric is disclosed. The inter-layer dielectric (ILD) for the via level is preferably different from the ILD for the line level. In a preferred embodiment, the via-level ILD is formed of a low-k SiCOH material, and the line-level ILD is formed of a low-k polymeric thermoset material.

公开(公告)号：WO2006088881A3

公开(公告)日：2007-01-18

申请号：PCT/US2006005204

申请日：2006-02-14

Applicant: IBM ,  SONY CORP ,  NGUYEN SON V ,  LANE SARAH L ,  LEE JIA ,  IDA KENSAKU ,  RESTAINO DARRYL D ,  NOGAMI TAKESHI

Inventor： NGUYEN SON V ,  LANE SARAH L ,  LEE JIA ,  IDA KENSAKU ,  RESTAINO DARRYL D ,  NOGAMI TAKESHI

IPC: H01L21/31

CPC classification number: H01L21/7682 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02354 ,  H01L21/3122 ,  H01L21/31633 ,  H01L2221/1047

Abstract: A porous low k or ultra low k dielectric film comprising atoms of Si, C, O and H (hereinafter "SiCOH") in a covalently bonded tri-dimensional network structure having a dielectric constant of less than about 3.0, a higher degree of crystalline bonding interactions, more carbon as methyl termination groups and fewer methylene, -CH 2 - crosslinking groups than prior art SiCOH dielectrics is provided. The SiCOH dielectric is characterized as having a FTIR spectrum comprising a peak area for CH 3 +CH 2 stretching of less than about 1.40, a peak area for SiH stretching of less than about 0.20, a peak area for SiCH 3 bonding of greater than about 2.0, and a peak area for Si-O-Si bonding of greater than about 60%, and a porosity of greater than about 20%.

Abstract translation: 在介电常数小于约3.0的共价键合的三维网络结构中，包含Si，C，O和H原子（以下称为“SiCOH”）的多孔低k或超低k电介质膜，结晶度更高 键合相互作用，提供比现有技术的SiCOH电介质更多的碳作为甲基端基和更少的亚甲基-CH 2 - 2交联基团。 SiCOH电介质的特征在于具有小于约1.40的CH 3 N 2 CH 2拉伸峰面积的FTIR光谱，SiH拉伸的峰面积小于 约0.20，SiCH 3键的峰面积大于约2.0，Si-O-Si键合的峰面积大于约60％，孔隙率大于约20％ 。

公开(公告)号：AU2002360420A1

公开(公告)日：2003-07-30

申请号：AU2002360420

申请日：2002-11-22

Applicant: IBM

Inventor： WANG YUN YU ,  GATES STEPHEN ,  AGARWALA BIRENDRA N ,  FITZSIMMONS JOHN A ,  LEE JIA ,  LUSTIG NAFTALI E

IPC: H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L23/532 ,  H01L23/48 ,  H01L21/469 ,  H01L21/4763

Abstract: An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a diffusion barrier or cap layer having a low dielectric constant (low-k). The cap layer is formed of amorphous nitrogenated hydrogenated silicon cabride, and has a dielectric constant (k) of less than about 5. A method for forming the BEOL metallization structure is also disclosed, where the cap layer is deposited using a plasma-enhanced chemical vapor deposition (PE CVD) process. The invention is particularly useful in interconnect structure comprising low-k dielectric material for the inter-layer dielectric (ILD) and copper for the conductors.