公开(公告)号：MY125019A

公开(公告)日：2006-07-31

申请号：MYPI19993104

申请日：1999-07-23

Applicant: IBM

Inventor： ARCHIBALD ALLEN ,  JEROME B LASKY ,  RANDY W MANN ,  JED H RANKIN ,  FRANCIS R WHITE

IPC: H01L21/285 ,  H01L21/28 ,  H01L23/48 ,  H01L21/4763

Abstract: A BURIED BUTTED CONTACT AND METHOD FOR ITS FABRICATION ARE PROVIDED WHICH INCLUDES A SUBSTRATE HAVING DOPANTS OF A FIRST CONDUCTIVITY TYPE AND HAVING SHALLOW TRENCH ISOLATION. DOPANTS OF A SECOND CONDUCTIVITY TYPE ARE LOCATED IN THE BOTTOM OF AN OPENING IN SAID SUBSTRATE. OHMIC CONTACT IS PROVIDED BETWEEN THE DOPANTS IN THE SUBSTRATE AND THE LOW DIFFUSIVITY DOPANTS THAT IS LOCATED ON A SIDE WALL OF THE OPENING. THE CONTACT IS A METAL SILICIDE, METAL AND/OR METAL ALLOY.(FIG.2)

公开(公告)号：SG102552A1

公开(公告)日：2004-03-26

申请号：SG1999005103

申请日：1999-10-13

Applicant: IBM

Inventor： ARCHIBALD ALLEN ,  TOSHIHARU FURUKAWA ,  EDWARD F O'NEIL ,  MARK C HAKEY ,  ROGER A VERHELST ,  DAVID V HORAK

IPC: H01L21/336 ,  H01L21/768 ,  H01L27/11

Abstract: The present invention overcomes the difficulties found in the background art by providing a direct low resistive contact between devices on a semiconductor chip without excessive current leakage. Current leakage is prevented in the preferred design by using silicon on insulator (SOI) construction for the chip. By constructing the direct contact over an insulator, such as silicon dioxide, current leakage is minimized. The preferred embodiment uses silicide to connect a polysilicon gate to a doped region of the substrate. An alternative embodiment of the present invention provides for the use of conductive studs to electrically connect devices. An increased density of approximately twenty percent may be realized using the present invention.