公开(公告)号：MY125019A

公开(公告)日：2006-07-31

申请号：MYPI19993104

申请日：1999-07-23

Applicant: IBM

Inventor： ARCHIBALD ALLEN ,  JEROME B LASKY ,  RANDY W MANN ,  JED H RANKIN ,  FRANCIS R WHITE

IPC: H01L21/285 ,  H01L21/28 ,  H01L23/48 ,  H01L21/4763

Abstract: A BURIED BUTTED CONTACT AND METHOD FOR ITS FABRICATION ARE PROVIDED WHICH INCLUDES A SUBSTRATE HAVING DOPANTS OF A FIRST CONDUCTIVITY TYPE AND HAVING SHALLOW TRENCH ISOLATION. DOPANTS OF A SECOND CONDUCTIVITY TYPE ARE LOCATED IN THE BOTTOM OF AN OPENING IN SAID SUBSTRATE. OHMIC CONTACT IS PROVIDED BETWEEN THE DOPANTS IN THE SUBSTRATE AND THE LOW DIFFUSIVITY DOPANTS THAT IS LOCATED ON A SIDE WALL OF THE OPENING. THE CONTACT IS A METAL SILICIDE, METAL AND/OR METAL ALLOY.(FIG.2)

公开(公告)号：GB2494564B

公开(公告)日：2018-12-19

申请号：GB201221748

申请日：2011-03-23

Applicant: IBM

Inventor： JED H RANKIN ,  MARK JAFFE ,  BRENT A ANDERSON

IPC: G06F3/041 ,  G06F3/042 ,  G06F3/044

公开(公告)号：SG97204A1

公开(公告)日：2003-07-18

申请号：SG200106328

申请日：2001-10-12

Applicant: IBM

Inventor： JAMES W ADKISSON ,  PAUL D AGNELLO ,  ARNE W BALLANTINE ,  RAMA DIVAKARUNI ,  ERIN JONES ,  EDWARD JOSEPH NOWAK ,  JED H RANKIN

IPC: H01L29/161 ,  H01L21/336 ,  H01L21/8234 ,  H01L21/84 ,  H01L27/08 ,  H01L27/088 ,  H01L27/092 ,  H01L27/12 ,  H01L29/423 ,  H01L29/786 ,  H01L29/78

Abstract: A double gated silicon-on-insulator (SOI) MOSFET is fabricated by forming epitaxially grown channels, followed by a damascene gate. The double gated MOSFET features narrow channels, which increases current drive per layout width and provides low out conductance.