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公开(公告)号:DE3866659D1
公开(公告)日:1992-01-16
申请号:DE3866659
申请日:1988-09-05
Applicant: IBM
Inventor: BAUSMITH ROBERT CROWELL , COTE WILLIAM JOSEPH , CRONIN JOHN EDWARD , HOLLAND KAREY LYNN , KAANTA CARTER WELLING , LEE PEI-ING PAUL , WRIGHT TERRANCE MONTE
IPC: C23F4/00 , H01L21/3213 , H01L21/31
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公开(公告)号:DE3572564D1
公开(公告)日:1989-09-28
申请号:DE3572564
申请日:1985-12-13
Applicant: IBM
IPC: H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/312
Abstract: A method of selectively tailoring the slope of via hole sidewalls of insulating layers of integrated circuits. A first insulator layer (12) (in which the vias are to be formed) is covered by a removable layer (14), and the two layers are isotropically etched. By varying the thickness of the removable layer (14) with respect to that of the insulator layer (12), the slope of the via hole sidewalls can be controlled.
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