公开(公告)号：JP2004201499A

公开(公告)日：2004-07-15

申请号：JP2004037233

申请日：2004-02-13

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： BERTIN CLAUDE LOUIS ,  CRONIN JOHN EDWARD

IPC: B81B5/00 ,  B81B7/00 ,  B81C1/00 ,  B81C3/00 ,  H01H1/00 ,  H01L21/306 ,  H01L29/84 ,  H01L49/00 ,  H02N1/00

CPC classification number: H01H1/0036 ,  H02N1/004

Abstract: PROBLEM TO BE SOLVED: To provide a machine and a method of production, making work useful for considerably larger degree than that executed by micromachine technology. SOLUTION: A machine structure respectively, including a plurality of micromachine layers stacked on each other, and its making method are presented. Each machine structure includes a movable member, demarcated from a micro-structure of at least one layer of a plurality of the micro-machine layers, including stacks. In the case of manufacture, VLSI technique is used, the micro-machine layer is formed separately thereafter stacked on each other in an arrangement by a form of the stack, the machine structure is demarcated. COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：DE69114759T2

公开(公告)日：1996-06-20

申请号：DE69114759

申请日：1991-04-13

Applicant: IBM

Inventor： CRONIN JOHN EDWARD ,  KAANTA CARTER WELLING ,  PREVITI-KELLY ROSEMARY ANN ,  RYAN JAMES GARDNER

IPC: C08L79/08 ,  H01L21/312 ,  H01L21/768 ,  H01L23/528 ,  H01L23/485

公开(公告)号：DE3852336T2

公开(公告)日：1995-05-24

申请号：DE3852336

申请日：1988-03-29

Applicant: IBM

Inventor： CRONIN JOHN EDWARD ,  LEACH MICHAEL ALBERT

IPC: H01L23/52 ,  H01L21/3205 ,  H01L23/538 ,  H05K1/02 ,  H05K3/46 ,  H01L21/60 ,  H01P3/08

公开(公告)号：SG71037A1

公开(公告)日：2000-03-21

申请号：SG1997002882

申请日：1997-08-08

Applicant: IBM

Inventor： CRONIN JOHN EDWARD ,  LUTHER BARBARA JEAN

IPC: H01L21/312 ,  H01L21/314 ,  H01L23/31 ,  H01L21/02

Abstract: An inorganic seal for encapsulation of an organic layer during passivation of an integrated circuit device and method for making the same is disclosed. The seal creates a structure which forms an inorganic to inorganic passivation seal over Reactive Ion Etched (RIE) edges in an all organic planar back end of the line (BEOL) insulator. The edge seal prevents the delamination of the passivation layer from the integrated circuit device or a metallization ring which may lead to subsequent formation of moisture-filled channels and corrosion of the metal lines of the device and the failure of the integrated circuit.

公开(公告)号：DE3852336D1

公开(公告)日：1995-01-19

申请号：DE3852336

申请日：1988-03-29

Applicant: IBM

Inventor： CRONIN JOHN EDWARD ,  LEACH MICHAEL ALBERT

IPC: H01L23/52 ,  H01L21/3205 ,  H01L23/538 ,  H05K1/02 ,  H05K3/46 ,  H01L21/60 ,  H01P3/08

公开(公告)号：DE69114346T2

公开(公告)日：1996-06-20

申请号：DE69114346

申请日：1991-04-13

Applicant: IBM

Inventor： CRONIN JOHN EDWARD ,  KAANTA CARTER WELLING ,  PREVITI-KELLY ROSEMARY ANN ,  RYAN JAMES GARDNER ,  LEE PEI-ING PAUL ,  YOON JUNG HOON

IPC: C08G73/10 ,  G03F7/038 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522 ,  H05K3/00 ,  H05K3/04 ,  H05K3/10 ,  H05K3/46 ,  H01L23/485

公开(公告)号：DE3872579T2

公开(公告)日：1993-02-25

申请号：DE3872579

申请日：1988-04-08

Applicant: IBM

Inventor： CRONIN JOHN EDWARD ,  LEE PEI-ING PAUL

IPC: H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L21/90 ,  H01L23/52

公开(公告)号：DE3866659D1

公开(公告)日：1992-01-16

申请号：DE3866659

申请日：1988-09-05

Applicant: IBM

Inventor： BAUSMITH ROBERT CROWELL ,  COTE WILLIAM JOSEPH ,  CRONIN JOHN EDWARD ,  HOLLAND KAREY LYNN ,  KAANTA CARTER WELLING ,  LEE PEI-ING PAUL ,  WRIGHT TERRANCE MONTE

IPC: C23F4/00 ,  H01L21/3213 ,  H01L21/31

公开(公告)号：AT50379T

公开(公告)日：1990-02-15

申请号：AT86114396

申请日：1986-10-17

Applicant: IBM

Inventor： CHOW MELANIE MIN-CHIEH ,  CRONIN JOHN EDWARD ,  GUTHRIE WILLIAM LESLIE ,  KAANTA CARTER WELLING ,  LUTHER BARBARA JEAN ,  PATRICK WILLIAM JOHN ,  PERRY KATHLEEN ALICE ,  STANDLEY CHARLES LAMBERT

IPC: H01L21/3205 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/768 ,  H05K3/04 ,  H05K3/10 ,  H05K3/46 ,  H01L21/90

Abstract: The method comprises the following steps:… providing a substrate (3) having an underlying metallization (4) therein; placing an insulator (5, 6, 8) on said substrate (3); selectively removing first portions of said insulator at first locations, said first portions partially penetrating through said insulator; selectively removing second portions of said insulator at second locations, said second portions penetrating fully through the remainder of said insulator; said second portions being in alignment with some of said first portions; simultaneously depositing metal (9) over said insulator to form said overlying metallization in said first locations and said stud via connections in said second locations, and removing any of said metal (9) which overlies said insulator at locations other than said first locations. The method is applied for forming simultaneously an overlying metallization pattern and stud via connections to an underlying metallization.

公开(公告)号：MY115683A

公开(公告)日：2003-08-30

申请号：MYPI9704000

申请日：1997-08-29

Applicant: IBM

Inventor： CRONIN JOHN EDWARD ,  LUTHER BARBARA JEAN

IPC: H01L39/12 ,  H01L21/312 ,  H01L21/314 ,  H01L23/31

Abstract: AN INORGANIC SEAL FOR ENCAPSULATION OF AN ORGANIC LAYER DURING PASSIVATION OF AN INTEGRATED CIRCUIT DEVICE AND METHOD FOR MAKING THE SAME IS DISCLOSED. THE SEAL CREATES A STRUCTURE WHICH FORMS AN INORGANIC TO INORGANIC PASSIVATION SEAL OVER REACTIVE ION ETCHED (RIE) EDGES IN AN ALL ORGANIC PLANAR BACK END OF THE LINE (BEOL) INSULATOR. THE EDGE SEAL PREVENTS THE DELAMINATION OF THE PASSIVATION LAYER FROM THE INTEGRATED CIRCUIT DEVICE OR A METALLIZATION RING WHICH MAY LEAD TO SUBSEQUENT FORMATION OF MOISTURE-FILLED CHANNELS AND CORROSION OF THE METAL LINES OF THE DEVICE AND THE FAILURE OF THE INTEGRATED CIRCUIT.