公开(公告)号：FR2303381A1

公开(公告)日：1976-10-01

申请号：FR7602995

申请日：1976-01-29

Applicant: IBM ,  IBM

Inventor： BERGER HORST ,  WIEDMANN SIEGFRIED ,  HORST BERGER ET SIEGFRIED WIEDMANN

IPC: H01L21/331 ,  H01L21/8226 ,  H01L27/02 ,  H01L27/082 ,  H01L29/73 ,  H03K19/091 ,  H01L27/06 ,  H03K19/08

公开(公告)号：FR2319977A1

公开(公告)日：1977-02-25

申请号：FR7619834

申请日：1976-06-24

Applicant: IBM

Inventor： BERGER HORST ,  WIEDMANN SIEGFRIED

IPC: G11C11/41 ,  H01L21/8226 ,  H01L27/02 ,  H01L27/07 ,  H01L27/082 ,  H01L29/08 ,  H01L27/04 ,  G11C11/34

Abstract: The semonconductor structure has at least two components having a common zone. A parasitic thyristor effect can be produced by a minority carrier injection current but is counteracted by means which prevent unwanted coupling between the components. A more highly doped zone is produced in the common zone (2) between transistor base (4) and the zone belonging to a further component. It represents the connection zone for the common zone (2), and forms a barrier (32) for the minority carrier injection current. This arrangement represses coupling interferences, esp. parasitic thyristor effects, while requiring fewer semiconductor surfaces than known solutions.

公开(公告)号：AU4992472A

公开(公告)日：1974-06-13

申请号：AU4992472

申请日：1972-12-11

Applicant: IBM

Inventor： BAITINGER UTZ ,  NAJMANN KNUT ,  REMSHARDT ROLF ,  WIEDMANN SIEGFRIED ,  BERGER HORST ,  PIETRASS HANSJORG

IPC: G11C7/20 ,  G11C11/411 ,  G11C17/08 ,  H01L27/102 ,  H03K3/286 ,  H03K3/356 ,  G11C11/40 ,  H01L19/00

公开(公告)号：FR2304991A1

公开(公告)日：1976-10-15

申请号：FR7602996

申请日：1976-01-29

Applicant: IBM

Inventor： BERGER HORST ,  HEUBER KLAUS ,  KLEIN WILFRIED ,  NAJMANN KNUT

IPC: G11C11/414 ,  G11C11/411 ,  G11C11/416 ,  G11C11/40

Abstract: The invention relates to a circuit arrangement for operating the read/write cycles of an integrated semiconductor memory storage system whose storage cells consist of flip flops with bipolar switching transistors, Schottky diodes as read/write elements coupling the cell to the bit lines, and high-resistivity resistors, or transistors controlled as current sources, as load elements, in several phases.