Means for equalizing line potential when the connecting switch is open
    1.
    发明授权
    Means for equalizing line potential when the connecting switch is open 失效
    用于在连接开关打开时均衡线路电位的装置

    公开(公告)号:US3899777A

    公开(公告)日:1975-08-12

    申请号:US44603374

    申请日:1974-02-25

    Applicant: IBM

    CPC classification number: G11C11/419 H03F3/45479

    Abstract: In a monolithic semiconductor storage the bit lines are selectively connected in pairs to the inputs of a read amplifier. In their separated state the potentials of the read lines (VB) and of the associated input lines of the read amplifier (VBS1, VBS2) show the same value and are derived from a common potential (VH). Potentials VB as well as VBS1 and VBS2 are derived via the same respective number of diode voltage drops from potential VH.

    Abstract translation: 在单片半导体存储器中,位线被选择性地与读取放大器的输入成对连接。 在分离状态下,读取放大器(VBS1,VBS2)的读取线(VB)和相关输入线的电位显示相同的值,并从公共电位(VH)导出。 电位VB以及VBS1和VBS2是通过从电位VH相同的相应数量的二极管电压降导出的。

    2.
    发明专利
    未知

    公开(公告)号:FR2295524A1

    公开(公告)日:1976-07-16

    申请号:FR7534718

    申请日:1975-11-05

    Applicant: IBM

    Abstract: This teaches a sense circuit for an integrated memory storage system in which the storage cell output is detected by a differential amplifier, controlling a flip-flop, serving as a latch, having load elements which also function as the load elements of the latch to ensure an optimum power and speed product. The latch can be coupled to an output driver circuit through a current switch which shares common elements with the latch to assure that the latch remains symmetrical even when used with an output driver having asymmetrical control.

    5.
    发明专利
    未知

    公开(公告)号:FR2312836A1

    公开(公告)日:1976-12-24

    申请号:FR7610165

    申请日:1976-04-01

    Applicant: IBM

    Abstract: A method and circuit arrangement for operating an information store, in particular a monolithic information store, whose storage cells and address circuits comprise bipolar transistors which are not continuously subjected to full power. The monolithic information store is readily fabricated by known planar process technology, has increased density, has reduced read/write times, reduced cycle time, and reduced power dissipation.

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