公开(公告)号：DE68926143D1

公开(公告)日：1996-05-09

申请号：DE68926143

申请日：1989-09-16

Applicant: IBM

Inventor： BRUCE JAMES ALLEN ,  KERBAUGH MICHAEL LYNN ,  KWONG RANEE WAI-LING ,  LEE TANYA NINA ,  LINDE HAROLD GEORGE ,  SACHDEV HARBANS SINGH ,  SACHDEV KRISHNA GANDHI

IPC: H01L21/302 ,  G03F7/09 ,  G03F7/40 ,  H01L21/027 ,  H01L21/3065

Abstract: The structure comprises a pattern of a cured polymeric material deposited onto a substrate, said polymeric material having at least one fluorine-containing functional group and of an overlying silylated photoresist material. For forming a structure on a substrate utilizing photolithographic techniques a layer of polymeric material containing a fluorine-containing compound is applied over the substrate and cured. A layer of photoresist material is applied over the polymeric material, imagewise exposed and developed to reveal the image on the underlying polymeric material. Thereafter, the photoresist is silylated, and the then present structure is reactive ion etched to transfer the pattern down to the underlying substrate. The fluorine component provides that the structure or the pattern and the underlying substrate respectively are free of residue and cracking.

公开(公告)号：DE68926143T2

公开(公告)日：1996-10-24

申请号：DE68926143

申请日：1989-09-16

Applicant: IBM

Inventor： BRUCE JAMES ALLEN ,  KERBAUGH MICHAEL LYNN ,  KWONG RANEE WAI-LING ,  LEE TANYA NINA ,  LINDE HAROLD GEORGE ,  SACHDEV HARBANS SINGH ,  SACHDEV KRISHNA GANDHI

IPC: H01L21/302 ,  G03F7/09 ,  G03F7/40 ,  H01L21/027 ,  H01L21/3065

Abstract: The structure comprises a pattern of a cured polymeric material deposited onto a substrate, said polymeric material having at least one fluorine-containing functional group and of an overlying silylated photoresist material. For forming a structure on a substrate utilizing photolithographic techniques a layer of polymeric material containing a fluorine-containing compound is applied over the substrate and cured. A layer of photoresist material is applied over the polymeric material, imagewise exposed and developed to reveal the image on the underlying polymeric material. Thereafter, the photoresist is silylated, and the then present structure is reactive ion etched to transfer the pattern down to the underlying substrate. The fluorine component provides that the structure or the pattern and the underlying substrate respectively are free of residue and cracking.

公开(公告)号：DE3577000D1

公开(公告)日：1990-05-10

申请号：DE3577000

申请日：1985-12-13

Applicant: IBM

Inventor： BRUCE JAMES ALLEN ,  NARECHANIA RAJESH GUNVANTLAL

IPC: G01R31/26 ,  G01N3/00 ,  G01N19/04 ,  G01N33/38 ,  H01L21/66 ,  H01L23/544 ,  G01N3/24 ,  H01L49/00 ,  H01L23/00

Abstract: A test site for gauging the adhesion between the insulating layers and the metal layers used to produce the various devices on a semiconductor chip. The chip-sized test site can be formed along with the product chips on the product wafers. The layers of the test site are arranged such that a first polyimide layer (16) forms a first test interface with a silicon nitride layer (12) and a second test interface with a first metal layer (14A, 14B), and a second polyimide layer - (20) forms a third test interface with a second metal layer - (18A, 18B), a fourth test interface with the first polyimide layer (16), and a fifth test interface with the silicon nitride layer ( 1 2). These five interfaces form a single continuous adhesion test interface (ATI). During a 90° peel test, the layers of the test site will sequentially separate along this interface (ATI). Thus, the adhesion at five different interfaces can be tested during a single peel test on a chip-sized test site.