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公开(公告)号:DE68926143D1
公开(公告)日:1996-05-09
申请号:DE68926143
申请日:1989-09-16
Applicant: IBM
Inventor: BRUCE JAMES ALLEN , KERBAUGH MICHAEL LYNN , KWONG RANEE WAI-LING , LEE TANYA NINA , LINDE HAROLD GEORGE , SACHDEV HARBANS SINGH , SACHDEV KRISHNA GANDHI
IPC: H01L21/302 , G03F7/09 , G03F7/40 , H01L21/027 , H01L21/3065
Abstract: The structure comprises a pattern of a cured polymeric material deposited onto a substrate, said polymeric material having at least one fluorine-containing functional group and of an overlying silylated photoresist material. For forming a structure on a substrate utilizing photolithographic techniques a layer of polymeric material containing a fluorine-containing compound is applied over the substrate and cured. A layer of photoresist material is applied over the polymeric material, imagewise exposed and developed to reveal the image on the underlying polymeric material. Thereafter, the photoresist is silylated, and the then present structure is reactive ion etched to transfer the pattern down to the underlying substrate. The fluorine component provides that the structure or the pattern and the underlying substrate respectively are free of residue and cracking.
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公开(公告)号:DE68926143T2
公开(公告)日:1996-10-24
申请号:DE68926143
申请日:1989-09-16
Applicant: IBM
Inventor: BRUCE JAMES ALLEN , KERBAUGH MICHAEL LYNN , KWONG RANEE WAI-LING , LEE TANYA NINA , LINDE HAROLD GEORGE , SACHDEV HARBANS SINGH , SACHDEV KRISHNA GANDHI
IPC: H01L21/302 , G03F7/09 , G03F7/40 , H01L21/027 , H01L21/3065
Abstract: The structure comprises a pattern of a cured polymeric material deposited onto a substrate, said polymeric material having at least one fluorine-containing functional group and of an overlying silylated photoresist material. For forming a structure on a substrate utilizing photolithographic techniques a layer of polymeric material containing a fluorine-containing compound is applied over the substrate and cured. A layer of photoresist material is applied over the polymeric material, imagewise exposed and developed to reveal the image on the underlying polymeric material. Thereafter, the photoresist is silylated, and the then present structure is reactive ion etched to transfer the pattern down to the underlying substrate. The fluorine component provides that the structure or the pattern and the underlying substrate respectively are free of residue and cracking.
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