公开(公告)号：EP1018160A4

公开(公告)日：2005-03-30

申请号：EP99939802

申请日：1999-01-29

Applicant: IBM ,  PERRAUD LAURENT CLAUDE

Inventor： GRILL ALFRED ,  JAHNES CHRISTOPHER VINCENT ,  PATEL VISHNUBHAI VITTHALBHAI ,  PERRAUD LAURENT CLAUDE

IPC: C23C16/32 ,  H01L21/312 ,  H01L21/316 ,  H01L23/29 ,  H01L23/522 ,  H01L23/532 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L21/76832 ,  C23C16/325 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31633 ,  H01L23/291 ,  H01L23/296 ,  H01L23/5222 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/30 ,  H01L2924/00

Abstract: A low dielectric constant, thermally stable hydrogenated oxidized silicon carbon film (38, 44) which can be used as an interconnect dielectric in IC chips is disclosed. Also disclosed is a method for fabricating a thermally stable hydrogenated oxidized silicon carbon low dielectric constant film utilizing a plasma enhanced chemical vapor deposition technique. Electronic devices containing insulating layers of thermally stable hydrogenated oxidized silicon carbon low dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of thermally stable hydrogenated oxidized silicon carbon low dielectric constant film (38, 44), specific precursor materials having a ring structure are preferred.

公开(公告)号：HK202396A

公开(公告)日：1996-11-15

申请号：HK202396

申请日：1996-11-07

Applicant: IBM

Inventor： GRILL ALFRED ,  HORNG CHENG TZONG ,  MEYERSON BERNARD STEELE ,  PATEL VISHNUBHAI VITTHALBHAI ,  RUSSAK MICHAEL ALLEN ,  CHANG HENRY CHINLIN ,  CHEN MAO-MIN ,  SCHWENKER ROBERT OTTO

IPC: G11B5/31 ,  G11B5/60

公开(公告)号：DE69214087D1

公开(公告)日：1996-10-31

申请号：DE69214087

申请日：1992-10-09

Applicant: IBM

Inventor： JASO MARK ANTHONY ,  JONES PAUL BRADLEY ,  MEYERSON BERNARD STEELE ,  PATEL VISHNUBHAI VITTHALBHAI

IPC: H01L21/304 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/768 ,  H01L21/311

公开(公告)号：SG74649A1

公开(公告)日：2000-08-22

申请号：SG1998002939

申请日：1998-08-08

Applicant: IBM

Inventor： BABICH KATHERINA E ,  BRUNNER TIMOTHY ALLAN ,  CALLEGARI ALESSANDRO CESARE ,  GRILL ALFRED ,  JAHNES CHRISTOPHER V ,  PATEL VISHNUBHAI VITTHALBHAI

IPC: C01B31/00 ,  C23C14/06 ,  G03F7/11 ,  H01L21/027 ,  H01L21/3205

公开(公告)号：DE2813659A1

公开(公告)日：1978-10-05

申请号：DE2813659

申请日：1978-03-30

Applicant: IBM

Inventor： ENGLER EDWARD MARTIN ,  NICHOLS KENNETH HERBERT ,  PATEL VISHNUBHAI VITTHALBHAI ,  RIVERA NILDA MARTINEZ ,  SCHUMAKER ROBERT RHESS

IPC: C09K3/16 ,  C07F1/00 ,  C07F1/08 ,  C07F3/06 ,  C07F15/00 ,  C08G75/00 ,  C08G79/00 ,  C09D5/24 ,  C09D185/00 ,  C07F11/00 ,  B05D5/08 ,  B05D5/12

Abstract: HIGHLY CODUCTING ORGANOMETALLIC POLYMERS This specification discloses highly conducting organometallic polymers having units chosen from the following recurring units and where each M is same or different and is a multivalent metal, and method for preparing the above polymers.

公开(公告)号：DE2525190A1

公开(公告)日：1975-12-18

申请号：DE2525190

申请日：1975-06-06

Applicant: IBM

Inventor： ENGLER EDWARD MARTIN ,  PATEL VISHNUBHAI VITTHALBHAI

IPC: C07D339/06 ,  C07D343/00 ,  C07D345/00 ,  H01B1/12

Abstract: Organic molecules can be coupled via their selenocarbonyl derivatives. Generally, the synthesis can be described by the following reaction equation:

公开(公告)号：DE69943235D1

公开(公告)日：2011-04-14

申请号：DE69943235

申请日：1999-01-29

Applicant: IBM ,  PERRAUD LAURENT CLAUDE

Inventor： GRILL ALFRED ,  JAHNES CHRISTOPHER VINCENT ,  PATEL VISHNUBHAI VITTHALBHAI ,  PERRAUD LAURENT CLAUDE

IPC: H01L23/48 ,  C23C16/32 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/29 ,  H01L23/522 ,  H01L23/532

公开(公告)号：SG137695A1

公开(公告)日：2007-12-28

申请号：SG2005049127

申请日：2001-10-25

Applicant: IBM

Inventor： GRILL ALFRED ,  PATEL VISHNUBHAI VITTHALBHAI

IPC: H01L21/768 ,  C23C16/40 ,  H01L21/312 ,  H01L21/316 ,  H01L23/522 ,  H01L23/532 ,  H01L21/31

Abstract: A method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing plasma enhanced chemical vapor deposition ("PECVD") process is disclosed. To enable the fabrication of thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, cyclic siloxanes and organic molecules containing ring structures, for instance, tetramethylcycloterasiloxane and cyclopentene oxide. To stabilize plasma in the PECVD reactor and thereby improve uniformity of the deposited film, CO2 is added to TMCTS as a carrier gas, or CO2 or a mixture of CO2 and O2 are added to the PECVD reactor.

公开(公告)号：MY123962A

公开(公告)日：2006-06-30

申请号：MYPI9802015

申请日：1998-05-06

Applicant: IBM

Inventor： BABICH KATHERINE E ,  CALLEGARI ALESSANDRO CESARE ,  FONTAINE JULIEN ,  GRILL ALFRED ,  JAHNES CHRISTOPHER ,  PATEL VISHNUBHAI VITTHALBHAI

IPC: B32B9/00 ,  H01L21/3205 ,  C23C16/26 ,  C23C16/30 ,  G03F7/09 ,  H01L21/027 ,  H01L21/311 ,  H01L21/312

Abstract: DISCLOSED IS VAPOR DEPOSITED BARC AND METHOD OF PREPARING TUNABLE AND REMOVABLE ANTIREFLECTIVE COATINGS BASED ON AMORPHOUS CARBON FILMS.THESE FILMS CAN BE HYDROGENATED, FLUORINATED, NITROGENATED CARBON FILMS. SUCH FILMS HAVE AN INDEX OF REFRACTION AND AN EXTINCTION COEFFICIENT TUNABLE FROM ABOUT 1.4 TO ABOUT 2.1 AND FROM ABOUT 0.1 TO ABOUT 0.6, RESPECTIVELY, AT UV AND DUV WAVELENGTHS, IN PARTICULAR 365, 248 AND 193 NM. MOREOVER, THE FILMS PRODUCED BY THE PRESENT INVENTION CAN BE DEPOSITED OVER DEVICE TOPOGRAPHY WITH HIGH CONFORMALITY, AND THEY ARE ETCHABLE BY OXYGEN AND/OR A FLUORIDE ION ETCH PROCESS. BECAUSE OF THEIR UNIQUE PROPERTIES, THESE FILMS CAN BE USED TO FORM A TUNABLE AND REMOVABLE ANTIREFLECTIVE COATING AT UV AND DUV WAVELENGTHS TO PRODUCE NEAR ZERO REFLECTANCE AT THE RESIST/BARC COATING INTERFACE. THIS BARC GREATLY IMPROVES PERFORMANCE OF SEMICONDUCTOR CHIPS.(FIG. 2B)

公开(公告)号：CA2055801C

公开(公告)日：1996-01-23

申请号：CA2055801

申请日：1991-11-19

Applicant: IBM

Inventor： GRILL ALFRED ,  HORNG CHENG TZONG ,  MEYERSON BERNARD STEELE ,  PATEL VISHNUBHAI VITTHALBHAI ,  RUSSAK MICHAEL ALLEN

IPC: G11B5/29 ,  G11B5/31 ,  G11B5/60 ,  G11B5/255

Abstract: A magnetic head slider having a protective coating on the rails thereof, the protective coating comprising a thin adhesion layer and a thin layer of amorphous hydrogenated carbon. The protective coating is deposited on the air bearing surface of the slider after the thin film magnetic heads are lapped to a chosen dimension, but before the pattern of rails is produced on the air bearing surface. The protective coating protects the magnetic head during the rail fabrication process and in usage in a magnetic recording system protects the magnetic head from wear and corrosion damage.