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    METHOD FOR EVALUATING THE EFFECTS OF MULTIPLE EXPOSURE PROCESSES IN LITHOGRAPHY
    1.
    发明公开
    METHOD FOR EVALUATING THE EFFECTS OF MULTIPLE EXPOSURE PROCESSES IN LITHOGRAPHY 有权
    多重曝光评估过程影响进程光刻

    公开(公告)号：EP1634122A4

    公开(公告)日：2009-02-11

    申请号：EP04752670

    申请日：2004-05-19

    Applicant: IBM

    Inventor： FONSECA CARLOS A ,  BUKOFSKY SCOTT J ,  LAI KAFAI

    IPC: G03C5/00 ,  G03F7/20 ,  G03F9/00

    CPC classification number: G03F7/705 ,  G03F7/70466 ,  G03F7/70625 ,  G03F7/70641

    Abstract: A method of evaluating process effects of multiple exposure photolithographic processes by first determining a set of expected images for each exposure step or process of the multiple exposure process individually (SET1, SET2) and then obtaining a composite set of images (FINALSET) by sequentially perturbing images from a first or previous exposure step (SET1) by weighted images from the subsequent exposure step (SET2). Preferably, the expected images are determined by simulation in the form of normalized aerial images over a range of defocus for each exposure step, and the weighting factor used is the dose-ratio of the subsequent exposure dose to the prior step exposure dose. The resulting composite set of images may be used to evaluate multiple exposure processes, for example, to provide an estimate of yield for a given budget of dose and focus errors, or alternatively, to provide specifications for tool error budgets required to obtain a target yield.

    MULTIPLE EXPOSURE PROCESS FOR FORMATION OF DENSE RECTANGULAR ARRAYS
    2.
    发明申请
    MULTIPLE EXPOSURE PROCESS FOR FORMATION OF DENSE RECTANGULAR ARRAYS 审中-公开
    形成透明矩形阵列的多次曝光过程

    公开(公告)号：WO0184235A2

    公开(公告)日：2001-11-08

    申请号：PCT/US0111696

    申请日：2001-04-10

    Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

    Inventor： BUKOFSKY SCOTT J ,  KUNKEL GERHARD ,  WISE RICHARD ,  WONG ALFRED

    IPC: G03F1/00 ,  G03F7/20 ,  G03F

    CPC classification number: G03F7/70466 ,  G03F7/203

    Abstract: A method for exposing a workpiece in a dual exposure step-and-repeat process starts by forming a design for a reticle mask. Deconstruct the design for the reticle mask by removing a set(s) of the features that are juxtaposed to form hollow polygonally-shaped clusters with a gap in the center. Form unexposed resist on the workpiece. Load the workpiece and the reticle mask into the stepper. Expose the workpiece through the reticle mask. Reposition the workpiece by a nanostep. Then expose the workpiece through the reticle mask after the repositioning. Test whether the plural exposure process is finished. If the result of the test is NO the process loops back to repeat some of the above steps. Otherwise the process has been completed. An overlay mark is produced by plural exposures of a single mark. A dead zone is provided surrounding an array region in which printing occurs subsequent to exposure in an original exposure. Alternatively, the workpiece can be fully exposed first by stepping a series of full steps, then going back to the starting position, making a nanostep to reset the starting position and re-exposing from the reset starting position in the same way with full steps from the nanostepped position. The clusters may be in the shape of a hexagon or a diamond.

    Abstract translation: 用于在双重曝光步骤和重复过程中曝光工件的方法通过形成掩模版掩模的设计而开始。 通过移除一些并列的特征来形成掩模版掩模的设计，以形成具有中心间隙的中空多边形簇。 在工件上形成未曝光的抗蚀剂。 将工件和掩模版掩模装入步进器。 通过掩模掩模将工件暴露。 用纳秒级重新定位工件。 然后在重新定位后将工件暴露在掩模版掩模之外。 测试多次曝光过程是否完成。 如果测试结果为“否”，则过程循环返回以重复上述步骤。 否则该过程已经完成。 通过单个标记的多次曝光产生重叠标记。 围绕阵列区域提供死区，其中在原始曝光中曝光之后发生印刷。 或者，可以通过步进一系列完整的步骤，然后返回到起始位置，首先完全暴露工件，从而使得纳秒能够以相同的方式从复位起始位置复位起始位置并再次曝光 纳米级位置。 簇可以是六边形或菱形的形状。

    Generating mask pattern for alternating phase-shift mask lithography
    3.
    发明专利
    Generating mask pattern for alternating phase-shift mask lithography 有权
    生成掩模图形用于替代相移屏蔽图

    公开(公告)号：JP2005037945A

    公开(公告)日：2005-02-10

    申请号：JP2004207387

    申请日：2004-07-14

    Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

    Inventor： LIEBMANN LARS W ,  BUKOFSKY SCOTT J ,  GRAUR IOANA

    IPC: G03F1/08 ,  G03C3/02 ,  G03C5/00 ,  G03F1/00 ,  G03F9/00 ,  G06F17/50 ,  H01L21/027

    CPC classification number: G03F1/30 ,  G03F1/70

    Abstract: PROBLEM TO BE SOLVED: To provide a method and an apparatus for generating a mask pattern for alternating phase-shift mask lithography.
    SOLUTION: The method for generating patterns of a pair of photomasks from a data set defining a circuit layout to be realized on a substrate includes identifying critical segments of the circuit layout to be realized on the substrate. Block mask patterns are generated and then legalized based on the identified critical segments. Thereafter, phase mask patterns are generated, legalized and colored. The legalized block mask patterns and the legalized phase mask patterns that have been colored define features of a block mask and an alternating phase shift mask, respectively, for use in a dual exposure method for patterning features in a resist layer of the substrate.
    COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题：提供一种用于产生用于交替相移掩模光刻的掩模图案的方法和装置。 解决方案：用于从定义要在基板上实现的电路布局的数据集中产生一对光掩模的图案的方法包括识别要在基板上实现的电路布局的关键段。 生成块掩码模式，然后根据所识别的关键段进行合法化。 此后，生成相位掩模图案，合法化和着色。 已经着色的合法化块掩模图案和合法化的相位掩模图案分别定义了块掩模和交替相移掩模的特征，用于在衬底的抗蚀剂层中构图特征的双曝光方法中。 版权所有（C）2005，JPO＆NCIPI

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