公开(公告)号：EP1800345A4

公开(公告)日：2008-11-05

申请号：EP05725566

申请日：2005-03-15

Applicant: IBM

Inventor： CHU JACK O ,  COBB MICHAEL A ,  SAUNDERS PHILIP A ,  SHI LEATHEN

IPC: H01L21/762 ,  H01L21/18 ,  H01L29/12

CPC classification number: H01L21/76254 ,  H01L21/0245 ,  H01L21/0251 ,  H01L29/1054

Abstract: A method for achieving a substantially defect free SGOI substrate which includes a SiGe layer that has a high Ge content of greater than about 25% atomic using a low temperature wafer bonding technique is described. The wafer bonding process described in the present application includes an initial prebonding annealing step that is capable of forming a bonding interface comprising elements of Si, Ge and O, i.e., interfacial SiGeO layer, between a SiGe layer and a low temperature oxide layer. The present invention also provides the SGOI substrate and structure that contains the same

公开(公告)号：WO2006031247A3

公开(公告)日：2006-10-12

申请号：PCT/US2005008493

申请日：2005-03-15

Applicant: IBM ,  CHU JACK O ,  COBB MICHAEL A ,  SAUNDERS PHILIP A ,  SHI LEATHEN

Inventor： CHU JACK O ,  COBB MICHAEL A ,  SAUNDERS PHILIP A ,  SHI LEATHEN

IPC: H01L21/20 ,  H01L21/30 ,  H01L21/331 ,  H01L27/01 ,  H01L27/108 ,  H01L29/04 ,  H01L31/117

CPC classification number: H01L21/76254 ,  H01L21/0245 ,  H01L21/0251 ,  H01L29/1054

Abstract: A method for achieving a substantially defect free SGOI substrate which includes a SiGe layer that has a high Ge content of greater than about 25% atomic using a low temperature wafer bonding technique is described. The wafer bonding process described in the present application includes an initial prebonding annealing step that is capable of forming a bonding interface comprising elements of Si, Ge and O, i.e., interfacial SiGeO layer, between a SiGe layer and a low temperature oxide layer. The present invention also provides the SGOI substrate and structure that contains the same

Abstract translation: 描述了使用低温晶片键合技术实现包括具有高于约25％原子的高Ge含量的SiGe层的基本上无缺陷的SGOI衬底的方法。 本申请中描述的晶片键合工艺包括初始预键合退火步骤，其能够在SiGe层和低温氧化物层之间形成包括Si，Ge和O的元素（即，界面SiGeO层）的键合界面。 本发明还提供了包含SGOI基材和SGOI基材的结构

公开(公告)号：DE102012215909A1

公开(公告)日：2013-03-21

申请号：DE102012215909

申请日：2012-09-07

Applicant: IBM

Inventor： LOFARO MICHAEL F ,  KRISHNAN MAHADEVAIYER ,  COBB MICHAEL A ,  MANZER DENNIS G

IPC: B24B37/04 ,  B24B37/10

Abstract: Eine Vorrichtung zum chemisch-mechanischen Planarisieren beinhaltet eine Spindelbaugruppenstruktur und mindestens eine Substrathalterung, die eine seitliche Linearbewegung zueinander ausführen, während Polierflächen einer Vielzahl zylindrischer Spindeln in der Spindelbaugruppenstruktur mindestens ein auf dem mindestens einen Substratträger befestigtes Substrat berühren und an diesem entlang rotieren. Die Richtung der seitlichen Linearbewegung liegt innerhalb der Ebene, welche die Vielzahl zylindrischer Spindeln berührt, und kann senkrecht zu den Rotationsachsen der Vielzahl zylindrischer Spindeln ausgerichtet sein.