公开(公告)号：WO02054505A3

公开(公告)日：2002-11-14

申请号：PCT/GB0105715

申请日：2001-12-21

Applicant: IBM ,  IBM UK

Inventor： AVOURIS PHAEDON ,  COLLINS PHILIP ,  MARTEL RICHARD

IPC: B82B3/00 ,  H01L21/00 ,  H01L21/82 ,  H01L29/06 ,  H01L29/15 ,  H01L29/16 ,  H01L29/78 ,  H01L29/786 ,  H01L51/30 ,  H01L51/20

CPC classification number: H01L51/0545 ,  B82Y10/00 ,  G11C2213/17 ,  G11C2213/18 ,  H01L51/0048 ,  H01L51/0512 ,  Y10S977/742 ,  Y10S977/845 ,  Y10S977/847 ,  Y10S977/888 ,  Y10S977/89 ,  Y10S977/896 ,  Y10S977/938

Abstract: A method is provided for forming a device. The method provides an insulating substrate including a source electrode, a drain electrode, and a gate electrode. The method provides carbon nanotube bundles including metallic and semiconducting component nanotubes in contact with the substrate. The method applies a voltage to the gate electrode to deplete the semiconducting component nanotubes of carriers, applies an electrical current through the nanotube, from a source electrode to a drain electrode, and breaks at least one metallic component nanotube to form a field effect transistor. The carbon nanotube bundle can be a multi-walled nanotube or a single-walled nanotube rope.

Abstract translation: 提供了一种用于形成装置的方法。 该方法提供了包括源电极，漏电极和栅电极的绝缘基板。 该方法提供了碳纳米管束，其包括与基底接触的金属和半导体组分纳米管。 该方法向栅电极施加电压以消耗载流子的半导体元件纳米管，从源电极向漏电极施加电流通过纳米管，并且断开至少一个金属成分纳米管以形成场效应晶体管。 碳纳米管束可以是多壁纳米管或单壁纳米管绳。

公开(公告)号：AT551734T

公开(公告)日：2012-04-15

申请号：AT03721349

申请日：2003-02-19

Applicant: IBM

Inventor： APPENZELLER JOERG ,  AVOURIS PHAEDON ,  CHAN KEVIN ,  COLLINS PHILIP ,  MARTEL RICHARD ,  WONG HON-SUM PHILIP

IPC: H01L51/05 ,  B82Y10/00 ,  H01L51/00 ,  H01L51/30

Abstract: A carbon-nanotube field transistor semiconductor device, comprising: a vertical carbon-nanotube (508) wrapped in a dielectric material (511); a source formed at a first side of the carbon-nanotube; a drain (515) formed on a second side of the carbon-nanotube; a bilayer nitride complex through which a band strap of each of the source and the drain is formed connecting the carbon-nanotube wrapped in the dielectric material to the source and the drain; and a gate (512) formed substantially over a portion of the carbon-nanotube. Further disclosed are methods for forming the following self-aligned carbon-nanotube field effect transistor: A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.

公开(公告)号：AT526690T

公开(公告)日：2011-10-15

申请号：AT01272504

申请日：2001-12-21

Applicant: IBM

Inventor： AVOURIS PHAEDON ,  COLLINS PHILIP ,  MARTEL RICHARD

IPC: B82B3/00 ,  H01L51/00 ,  B82Y10/00 ,  H01L21/00 ,  H01L21/82 ,  H01L29/06 ,  H01L29/15 ,  H01L29/16 ,  H01L29/78 ,  H01L29/786 ,  H01L51/05 ,  H01L51/30

Abstract: A method is provided for forming a device. The method provides a substrate, and provides a plurality of nanotubes in contact with the substrate. The method comprises depositing metal contacts on the substrate, wherein the metal contacts are in contact with a portion of at least one nanotube. The method further comprises selectively breaking the at least one nanotube using an electrical current, removing the metal contacts, cleaning a remaining nanotube, and depositing a first metal contact in contact with a first end of the nanotube and a second metal contact in contact with a second end of the nanotube.