Abstract:
A structure, and a method for fabricating the structure, for the isolation of electronic devices is disclosed. The electronic devices are processed in substrates comprising a SiGe based layer underneath a strained Si layer. The isolation structure comprises a trench extending downward from the substrate top surface and penetrating into the SiGe based layer, forming a sidewall in the substrate. An epitaxial Si liner is selectively deposited onto the trench sidewall, and subsequently thermally oxidized. The trench is filled with a trench dielectric, which protrudes above the substrate top surface.
Abstract:
A carbon-nanotube field transistor semiconductor device, comprising: a vertical carbon-nanotube (508) wrapped in a dielectric material (511); a source formed at a first side of the carbon-nanotube; a drain (515) formed on a second side of the carbon-nanotube; a bilayer nitride complex through which a band strap of each of the source and the drain is formed connecting the carbon-nanotube wrapped in the dielectric material to the source and the drain; and a gate (512) formed substantially over a portion of the carbon-nanotube. Further disclosed are methods for forming the following self-aligned carbon-nanotube field effect transistor: A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.
Abstract:
Formation of at least one deep trench structure comprises providing at least one deep trench having sidewalls that extend to a common bottom wall in a substrate surface, each of the deep trenches having initial dimensions that are wider than targeted dimensions for the deep trenches; and forming an epitaxial silicon film on at least some portions of the sidewalls to reduce the initial dimensions of the deep trenches to the targeted dimensions.
Abstract:
The invention pertains to a computer tutorial system wherein software produc t training is provided interactively by guiding the user, for example, through one or more examples or applications that can be created in and/or using the product. More particularly, the invention involves a computer implemented, interactive tutorial system providing onlin e instruction in conjunction with a contemporaneously operating software product to, for example, create such examples or applications and the tutorial system further providing for the creation of such examples or applications in and/or using the product.
Abstract:
The invention pertains to a computer tutorial system wherein software produc t training is provided interactively by guiding the user, for example, through one or more examples or applications that can be created in and/or using the product. More particularly, the invention involves a computer implemented, interactive tutorial system providing onlin e instruction in conjunction with a contemporaneously operating software product to, for example, create such examples or applications and the tutorial system further providing for the creation of such examples or applications in and/or using the product.