SHALLOW TRENCH ISOLATION STRUCTURE FOR STRAINED Si ON SiGe
    1.
    发明申请
    SHALLOW TRENCH ISOLATION STRUCTURE FOR STRAINED Si ON SiGe 审中-公开
    应变硅SiGe上的浅沟槽隔离结构

    公开(公告)号:WO2004077509A3

    公开(公告)日:2004-10-21

    申请号:PCT/US2004005020

    申请日:2004-02-20

    CPC classification number: H01L29/7842 H01L21/76224 H01L29/78687

    Abstract: A structure, and a method for fabricating the structure, for the isolation of electronic devices is disclosed. The electronic devices are processed in substrates comprising a SiGe based layer underneath a strained Si layer. The isolation structure comprises a trench extending downward from the substrate top surface and penetrating into the SiGe based layer, forming a sidewall in the substrate. An epitaxial Si liner is selectively deposited onto the trench sidewall, and subsequently thermally oxidized. The trench is filled with a trench dielectric, which protrudes above the substrate top surface.

    Abstract translation: 公开了用于隔离电子设备的结构和用于制造该结构的方法。 电子器件在包括应变Si层下方的SiGe基础层的衬底中进行处理。 隔离结构包括从衬底顶表面向下延伸并穿透SiGe基层的沟槽,在衬底中形成侧壁。 外延Si衬垫被选择性地沉积到沟槽侧壁上,并且随后被热氧化。 沟槽填充有沟槽电介质,其突出于衬底顶表面之上。

    3.
    发明专利
    未知

    公开(公告)号:AT551734T

    公开(公告)日:2012-04-15

    申请号:AT03721349

    申请日:2003-02-19

    Applicant: IBM

    Abstract: A carbon-nanotube field transistor semiconductor device, comprising: a vertical carbon-nanotube (508) wrapped in a dielectric material (511); a source formed at a first side of the carbon-nanotube; a drain (515) formed on a second side of the carbon-nanotube; a bilayer nitride complex through which a band strap of each of the source and the drain is formed connecting the carbon-nanotube wrapped in the dielectric material to the source and the drain; and a gate (512) formed substantially over a portion of the carbon-nanotube. Further disclosed are methods for forming the following self-aligned carbon-nanotube field effect transistor: A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.

    INTERACTIVE TUTORIAL
    5.
    发明专利

    公开(公告)号:CA2317825C

    公开(公告)日:2006-02-07

    申请号:CA2317825

    申请日:2000-09-07

    Applicant: IBM CANADA

    Abstract: The invention pertains to a computer tutorial system wherein software produc t training is provided interactively by guiding the user, for example, through one or more examples or applications that can be created in and/or using the product. More particularly, the invention involves a computer implemented, interactive tutorial system providing onlin e instruction in conjunction with a contemporaneously operating software product to, for example, create such examples or applications and the tutorial system further providing for the creation of such examples or applications in and/or using the product.

    INTERACTIVE TUTORIAL
    6.
    发明专利

    公开(公告)号:CA2317825A1

    公开(公告)日:2002-03-07

    申请号:CA2317825

    申请日:2000-09-07

    Applicant: IBM CANADA

    Abstract: The invention pertains to a computer tutorial system wherein software produc t training is provided interactively by guiding the user, for example, through one or more examples or applications that can be created in and/or using the product. More particularly, the invention involves a computer implemented, interactive tutorial system providing onlin e instruction in conjunction with a contemporaneously operating software product to, for example, create such examples or applications and the tutorial system further providing for the creation of such examples or applications in and/or using the product.

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