公开(公告)号：JPH11186243A

公开(公告)日：1999-07-09

申请号：JP28213898

申请日：1998-10-05

Applicant: IBM

Inventor： ARMACOST MICHAEL D ,  CONLEY WILLARD E ,  COTLER-WAGNER TINA J ,  DELLAGUARDIA RONALD A ,  DOBUZINSKY DAVID M ,  PASSOW MICHAEL L ,  WILLE WILLIAM C

IPC: G03F7/40 ,  G03F7/033 ,  G03F7/039 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311

Abstract: PROBLEM TO BE SOLVED: To provide a resist prescription which is capable of reducing blisters that are generated in a reactive ion etching process to increase the deposit of a resin by-product. SOLUTION: Gaseous fluorocarbon etchant is excited by energy large enough to generate a plasma of high density, wherein the ratio of carbon to fluorine of the etchant is at least 0.33. A resist 12 which is least blistered under the above conditions contains resin binder of terpolymer besides a usual optically active component, wherein the resin binder is composed of (a) a first unit which contains groups unstable to acid, (b) a second unit which does not contain reactive groups and hydroxyl groups, and (c) a third unit which is conducive to development by an aqueous developing agent. The resist, layer 12 on a silicon oxide layer 14 is patterned, and plasma of high density is introduced onto the silicon oxide layer 14, and at least an opening 18 is provided to the silicon oxide layer 14 by etching.

公开(公告)号：DE69821458D1

公开(公告)日：2004-03-11

申请号：DE69821458

申请日：1998-11-19

Applicant: IBM

Inventor： ARMACOST MICHAEL D ,  CONLEY WILLARD E ,  COTLER-WAGNER TINA J ,  DELLAGUARDIA RONALD A ,  DOBUZINSKY DAVID M ,  PASSOW MICHAEL L ,  WILLE WILLIAM C

IPC: G03F7/40 ,  G03F7/033 ,  G03F7/039 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768

Abstract: A resist formulation minimizes blistering during reactive ion etching processes resulting in an increased amount of polymer by-product deposition. Such processes involve exciting a gaseous fluorocarbon etchant with sufficient energy to form a high-density plasma, and the use of an etchant having a carbon-to-fluorine ratio of at least 0.33. In addition to a conventional photoactive component, resists which minimize blistering under these conditions include a resin binder which is a terpolymer having: (a) units that contain acid-labile groups; (b) units that are free of reactive groups and hydroxyl groups; and (c) units that contribute to aqueous developability of the photoresist. After the photoresist is patterned on the silicon oxide layer and the high-density plasma is formed, the high-density plasma is introduced to the silicon oxide layer to etch at least one opening in the silicon oxide layer. Preferably, the terpolymer is made up of about 70% 4-hydroxystyrene, about 20% styrene, and about 10% t-butylacrylate.