公开(公告)号：WO2004027865A3

公开(公告)日：2004-07-15

申请号：PCT/EP0310401

申请日：2003-09-18

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： ANDERSON DAVID ,  BARTH HANS-JOACHIM ,  BURRELL LLOYD G ,  CHAN JOSEPH ,  CRABBE EMMANUEL F ,  KEMERER DOUGLAS W ,  NYE ILL HENRY A

IPC: H01L21/60 ,  H01L23/485

CPC classification number: H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05093 ,  H01L2224/05546 ,  H01L2224/05553 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/13099 ,  H01L2224/45144 ,  H01L2224/48624 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/05042 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/00

Abstract: A semiconductor device (200) having support structures (218, 226, 236) beneath wirebond regions (214) of contact pads (204) and a method of forming same. Low modulus dielectric layers (216, 222, 232) are disposed over a workpiece (212). Support structures (218, 226, 236) are formed in the low modulus dielectric layers (216, 222, 232), and support vias (224, 234) are formed between the support structures (218, 226, 236). A high modulus dielectric film (220, 230) is disposed between each low modulus dielectric layer (216, 222, 232), and a high modulus dielectric layer (256) is disposed over the top low modulus dielectric layer (232). Contact pads (204) are formed in the high modulus dielectric layer (256). Each support via (234) within the low modulus dielectric layer (232) resides directly above a support via (224) in the underlaying low modulus dielectric layer (222), to form a plurality of via support stacks within the low modulus dielectric layers (216, 222, 232).

Abstract translation: 一种半导体器件（200），其具有在接触焊盘（204）的焊线区（214）下方的支撑结构（218,226,236）及其形成方法。 低模量介电层（216,222,232）设置在工件（212）上方。 在低模量介电层（216,222,232）中形成支撑结构（218,226,236），并且在支撑结构（218,226,236）之间形成支撑通孔（224,234）。 高模量电介质膜（220,230）设置在每个低模量电介质层（216,222,232）之间，并且高模量电介质层（256）设置在顶部低模量电介质层（232）之上。 接触垫（204）形成在高模量电介质层（256）中。 在低模量介电层（232）内的每个支撑通孔（234）位于底部低模量介电层（222）中的支撑通孔（224）的正上方，以在低模量介电层（222）内形成多个通孔支撑堆叠 216，222，232）。

公开(公告)号：DE69231310T2

公开(公告)日：2001-02-15

申请号：DE69231310

申请日：1992-10-12

Applicant: IBM

Inventor： CRABBE EMMANUEL F ,  HARAME DAVID L ,  MEYERSON BERNARD S ,  PATTON GARY ,  STORK JOHANNES M C

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/165 ,  H01L29/737

Abstract: A heterojunction bipolar transistor having a single-crystal emitter with reduced charge storage and acceptable current gain is described herein. The heterojunction transistor comprises a collector region (604), a base region (606) formed on the collector region, and a single-crystal emitter region (608) grown on the base region (606) by low temperature epitaxy. During the formation of the base region (606), a graded profile of 5-23% germanium is added to the base, as the distance to the collector region (604) decreases, thereby decreasing the base bandgap as it approaches the collector region. Further, during the formation of the emitter region (608), a graded profile of 0-20% germanium is added to the emitter as the distance from the emitter-base junction increases. Thus, the emitter bandgap decreases as it moves farther from the emitter-base junction. The result of the above grading profiles is that the emitter bandgap is narrower at the emitter contact than the base bandgap at the emitter-base junction.

公开(公告)号：DE69231310D1

公开(公告)日：2000-09-07

申请号：DE69231310

申请日：1992-10-12

Applicant: IBM

Inventor： CRABBE EMMANUEL F ,  HARAME DAVID L ,  MEYERSON BERNARD S ,  PATTON GARY ,  STORK JOHANNES M C

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/165 ,  H01L29/737

Abstract: A heterojunction bipolar transistor having a single-crystal emitter with reduced charge storage and acceptable current gain is described herein. The heterojunction transistor comprises a collector region (604), a base region (606) formed on the collector region, and a single-crystal emitter region (608) grown on the base region (606) by low temperature epitaxy. During the formation of the base region (606), a graded profile of 5-23% germanium is added to the base, as the distance to the collector region (604) decreases, thereby decreasing the base bandgap as it approaches the collector region. Further, during the formation of the emitter region (608), a graded profile of 0-20% germanium is added to the emitter as the distance from the emitter-base junction increases. Thus, the emitter bandgap decreases as it moves farther from the emitter-base junction. The result of the above grading profiles is that the emitter bandgap is narrower at the emitter contact than the base bandgap at the emitter-base junction.