公开(公告)号：JP2000150785A

公开(公告)日：2000-05-30

申请号：JP31468798

申请日：1998-11-05

Applicant: IBM

Inventor： KENNETH RAYMOND CARTER ,  ROBERT FRANCIS COOK ,  MARTHA ERIN HERBISON ,  CRAIG JOHN HAWKER ,  JAMES LUPTON HEDRICK ,  LEE VICTOR YEE-WAY ,  ERIK GERHARD RINIGER ,  ROBERT DENNIS MILLER ,  BILLY VOLKSEN ,  DOU IEN YOON

IPC: H01L27/04 ,  C09K3/16 ,  H01L21/31 ,  H01L21/312 ,  H01L21/822

Abstract: PROBLEM TO BE SOLVED: To improve mechanical toughness and polishing characteristics by allowing a dielectric composition for creating an integrated circuit to contain a methylsilsesquioxan and a photosensitive base or a heat-sensitive base product. SOLUTION: In a multilayer integrated circuit device, the lower layer of insulated flattening metal circuit lines 4 is allowed to function as a substrate 2, a perpendicular metal stud 8 is formed in the substrate 2, and at the same time a dielectric material 6 is buried between the flattening metal circuit lines 4 for formation. The dielectric material 6 contains tetraalkoxysilane and tetraethoxy silane, alkyl/trialkoxy, or trihalo silicate, or dialkyl/dialkoxy, or alkyl (methyl) phenylsilsesquioxan that is mixed with dihalo silicate, and a photosensitive base or a heat-sensitive base product.

公开(公告)号：JPH10135332A

公开(公告)日：1998-05-22

申请号：JP28044397

申请日：1997-10-14

Applicant: IBM

Inventor： CRAIG JOHN HAWKER ,  JAMES LUPTON HEDRICK ,  ROBERT DENNIS MILLER

IPC: H01L21/3205 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To make the arranging interval of metallic circuit wiring narrower without increasing cross talk nor capacity coupling, by reducing the dielectric constant of a dielectric material by arranging a dielectric composition containing the resulted product of the reaction between a multi-branched high polymer and an organic polysilica adjacently to the circuit wiring on a substrate. SOLUTION: A dielectric composition 6 containing the resulted product of the reaction between a multi-branched high polymer and an organic polysilica is arranged adjacently to metallic circuit wiring 4 laid on a substrate 2. A suitable multi-branched high polymer includes multi-branched poly(allyl ether phenyl quinoxaline), poly(ether quinoline), poly(allyl ester), poly(ether ketone), etc. In addition, a suitable polysilica includes such silsesquioxane as the phenyl/ C1-6 alykylsilsesquioxane, etc. For example, the dielectric material 6 containing the reaction product is disposed between the metallic circuit wiring 4 laid on the substrate 2 having vertical studs 8.