公开(公告)号：JP2000150785A

公开(公告)日：2000-05-30

申请号：JP31468798

申请日：1998-11-05

Applicant: IBM

Inventor： KENNETH RAYMOND CARTER ,  ROBERT FRANCIS COOK ,  MARTHA ERIN HERBISON ,  CRAIG JOHN HAWKER ,  JAMES LUPTON HEDRICK ,  LEE VICTOR YEE-WAY ,  ERIK GERHARD RINIGER ,  ROBERT DENNIS MILLER ,  BILLY VOLKSEN ,  DOU IEN YOON

IPC: H01L27/04 ,  C09K3/16 ,  H01L21/31 ,  H01L21/312 ,  H01L21/822

Abstract: PROBLEM TO BE SOLVED: To improve mechanical toughness and polishing characteristics by allowing a dielectric composition for creating an integrated circuit to contain a methylsilsesquioxan and a photosensitive base or a heat-sensitive base product. SOLUTION: In a multilayer integrated circuit device, the lower layer of insulated flattening metal circuit lines 4 is allowed to function as a substrate 2, a perpendicular metal stud 8 is formed in the substrate 2, and at the same time a dielectric material 6 is buried between the flattening metal circuit lines 4 for formation. The dielectric material 6 contains tetraalkoxysilane and tetraethoxy silane, alkyl/trialkoxy, or trihalo silicate, or dialkyl/dialkoxy, or alkyl (methyl) phenylsilsesquioxan that is mixed with dihalo silicate, and a photosensitive base or a heat-sensitive base product.