公开(公告)号：JP2005311366A

公开(公告)日：2005-11-04

申请号：JP2005119003

申请日：2005-04-15

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： CLEVENGER LAWRENCE A ,  CHIRAS STEFANIE R ,  DALTON TIMOTHY ,  DEMAREST JAMES J ,  DUNN DERREN N ,  DZIOBKOWSKI CHESTER T ,  FLAITZ PHILIP L ,  LANE MICHAEL W ,  LLOYD JAMES R ,  DARYL D RESUTAINO ,  SHAW THOMAS M ,  WANG YUN YU ,  YANG CHIH-CHAO

IPC: H01L21/312 ,  H01L21/316 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/532

CPC classification number: H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02315 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To realize an interconnection structure that improves the adhesion between an upper low-k dielectric layer and a diffusion barrier cap dielectric layer existing therebeneath. SOLUTION: In the interconnection structure, adhesion between the upper low-k (for example, the dielectric coefficient is less than 4.0) dielectric layer (for example, a dielectric containing an element group consisting of Si, C, O, and H) and the diffusion barrier cap dielectric layer (for example, a cap layer containing an element group consisting of C, Si, N, and H) existing therebeneath is improved, by providing an adhesion transition layer in between the two layers. Because the adhesion transition layer exists between the upper low-k dielectric layer and the diffusion barrier cap dielectric layer, the possibility that the layers in the interconnection structure are separated in a packaging process is reduced. The adhesion transition layer provided here comprises a lower SiO x (or SiON) contained region and an upper C inclination region. Such a structure and, in particular, a method for forming an adhesion transition layer are also provided. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：实现改善上部低k电介质层和存在于其之间的扩散阻挡盖电介质层之间的粘附性的互连结构。 解决方案：在互连结构中，上部低k（例如，介电系数小于4.0）电介质层（例如，包含由Si，C，O和 H）和扩散阻挡盖电介质层（例如，包含由C，Si，N和H构成的元素组的覆盖层）提高，通过在两层之间提供粘合过渡层。 由于粘附过渡层存在于上部低k电介质层和扩散阻挡层电介质层之间，因此在封装过程中互连结构中的层分离的可能性降低。 这里提供的粘合过渡层包含较低的SiO xS（或SiON）含有区域和上C倾斜区域。 还提供了这种结构，特别是形成粘附过渡层的方法。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2001274250A

公开(公告)日：2001-10-05

申请号：JP2001033679

申请日：2001-02-09

Applicant: IBM

Inventor： KERN STEPHEN A ,  DOLDUN DIMOSI J ,  PHIZHIMONS JOHN A ,  STEPHEN MCCONELL GATES ,  LYN M GIGUNAKKU ,  PAUL CHARLES JAMISON ,  KANUKU LEE ,  PURUSHOTHAMAN SAMPATH ,  DARYL D RESUTAINO ,  EVA SIMONY ,  HORATIO SEYMOUR WILDMAN

IPC: H01L21/28 ,  H01L21/31 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device which includes a diffused barrier layer. SOLUTION: A semiconductor device includes a semiconductor substrate including a conductive metallic element and a diffused barrier layer in contact with the conductive metallic element is bonded to at least a part of the substrate, has upper/lower faces and a center part, formed of silicon, carbon, nitrogen and hydrogen and in which silicon is distributed nonuniformly over the whole diffused barrier layer. Thus, concentration of nitrogen near the lower and upper faces of the diffused barrier layer is higher than at the center part of the diffused barrier layer. Then, a method for manufacturing the semiconductor device is also provided.