公开(公告)号：JP2007194639A

公开(公告)日：2007-08-02

申请号：JP2007010824

申请日：2007-01-19

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： DEBORAH ANNE NEWMEYER ,  STEPHEN MCCONELL GATES ,  VISHNUBHAI V PATEL ,  GRILL ALFRED ,  NGUYEN SON VAN ,  ALI AFZALI-ARDAKANI

IPC: H01L21/316

CPC classification number: H01L21/31695 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/02362 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide SiCOH dielectrics and its manufacturing method. SOLUTION: There is provided a useful porous composite material in semiconductor device manufacturing in which the diameter (or the feature size) of a pore and pore size distribution (PSD) are controlled using a nanoscale and which shows an improved cohesive force (or which is the same with improved fracture toughness or improved brittleness) and increase in the power of resistance to the deterioration of the property of wafer such as stress corrosion cracking, Cu invasion, and other important property. The porous composite material is manufactured using at least one bifunctional organic pore source as a precursor compound. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供SiCOH电介质及其制造方法。 解决方案：在半导体器件制造中提供了有用的多孔复合材料，其中使用纳米尺度控制孔和孔径分布（PSD）的直径（或特征尺寸）并且其显示出改善的内聚力（ 或与改善的断裂韧性或脆性提高相同），耐腐蚀性能的提高，例如应力腐蚀开裂，Cu侵蚀等重要的特性。 使用至少一种双功能有机孔源作为前体化合物制造多孔复合材料。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2001274250A

公开(公告)日：2001-10-05

申请号：JP2001033679

申请日：2001-02-09

Applicant: IBM

Inventor： KERN STEPHEN A ,  DOLDUN DIMOSI J ,  PHIZHIMONS JOHN A ,  STEPHEN MCCONELL GATES ,  LYN M GIGUNAKKU ,  PAUL CHARLES JAMISON ,  KANUKU LEE ,  PURUSHOTHAMAN SAMPATH ,  DARYL D RESUTAINO ,  EVA SIMONY ,  HORATIO SEYMOUR WILDMAN

IPC: H01L21/28 ,  H01L21/31 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device which includes a diffused barrier layer. SOLUTION: A semiconductor device includes a semiconductor substrate including a conductive metallic element and a diffused barrier layer in contact with the conductive metallic element is bonded to at least a part of the substrate, has upper/lower faces and a center part, formed of silicon, carbon, nitrogen and hydrogen and in which silicon is distributed nonuniformly over the whole diffused barrier layer. Thus, concentration of nitrogen near the lower and upper faces of the diffused barrier layer is higher than at the center part of the diffused barrier layer. Then, a method for manufacturing the semiconductor device is also provided.