公开(公告)号：JP2001274250A

公开(公告)日：2001-10-05

申请号：JP2001033679

申请日：2001-02-09

Applicant: IBM

Inventor： KERN STEPHEN A ,  DOLDUN DIMOSI J ,  PHIZHIMONS JOHN A ,  STEPHEN MCCONELL GATES ,  LYN M GIGUNAKKU ,  PAUL CHARLES JAMISON ,  KANUKU LEE ,  PURUSHOTHAMAN SAMPATH ,  DARYL D RESUTAINO ,  EVA SIMONY ,  HORATIO SEYMOUR WILDMAN

IPC: H01L21/28 ,  H01L21/31 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device which includes a diffused barrier layer. SOLUTION: A semiconductor device includes a semiconductor substrate including a conductive metallic element and a diffused barrier layer in contact with the conductive metallic element is bonded to at least a part of the substrate, has upper/lower faces and a center part, formed of silicon, carbon, nitrogen and hydrogen and in which silicon is distributed nonuniformly over the whole diffused barrier layer. Thus, concentration of nitrogen near the lower and upper faces of the diffused barrier layer is higher than at the center part of the diffused barrier layer. Then, a method for manufacturing the semiconductor device is also provided.