公开(公告)号：EP1687457A4

公开(公告)日：2009-06-17

申请号：EP04812387

申请日：2004-11-29

Applicant: IBM

Inventor： CABRAL CYRIL JR ,  DETAVERNIER CHRISTOPHER ,  JAMMY RAJARAO ,  SAENGER KATHERINE L

IPC: H01L21/8238 ,  C23C14/06 ,  C23C16/32 ,  H01L27/108 ,  H01L29/49

CPC classification number: H01L29/4966 ,  H01L21/823842

Abstract: A semiconductor device such as a complementary metal oxide semiconductor (CMOS) comprising at least one FET that comprises a gate electrode comprising a metal carbide and method of fabrication are provided. The CMOS comprises dual work function metal gate electrodes whereby the dual work functions are provided by a metal and a carbide of a metal.

公开(公告)号：WO2005062752A2

公开(公告)日：2005-07-14

申请号：PCT/US2004039855

申请日：2004-11-29

Applicant: IBM ,  CABRAL CYRIL JR ,  DETAVERNIER CHRISTOPHER ,  JAMMY RAJARAO ,  SAENGER KATHERINE L

Inventor： CABRAL CYRIL JR ,  DETAVERNIER CHRISTOPHER ,  JAMMY RAJARAO ,  SAENGER KATHERINE L

IPC: H01L21/8238 ,  H01L27/108 ,  H01L29/49

CPC classification number: H01L29/4966 ,  H01L21/823842

Abstract: A semiconductor device such as a complementary metal oxide semiconductor (CMOS) comprising at least one FET that comprises a gate electrode comprising a metal carbide and method of fabrication are provided. The CMOS comprises dual work function metal gate electrodes whereby the dual work functions are provided by a metal and a carbide of a metal.

Abstract translation: 提供了包括至少一个FET的半导体器件，例如互补金属氧化物半导体（CMOS），其包括包含金属碳化物的栅电极和制造方法。 CMOS包括双功能金属栅电极，由此双功能功能由金属和金属的碳化物提供。

公开(公告)号：DE602004025966D1

公开(公告)日：2010-04-22

申请号：DE602004025966

申请日：2004-11-29

Applicant: IBM

Inventor： CABRAL CYRIL JR ,  DETAVERNIER CHRISTOPHER ,  JAMMY RAJARAO ,  SAENGER KATHERINE L

IPC: C22C32/00 ,  C23C14/06 ,  C23C16/32 ,  H01L21/8238 ,  H01L27/108 ,  H01L29/49

Abstract: A semiconductor device such as a complementary metal oxide semiconductor (CMOS) including at least one FET that includes a gate electrode including a metal carbide and method of fabrication are provided. The CMOS comprises dual work function metal gate electrodes whereby the dual work functions are provided by a metal and a carbide of a metal.

公开(公告)号：AT460746T

公开(公告)日：2010-03-15

申请号：AT04812387

申请日：2004-11-29

Applicant: IBM

Inventor： CABRAL CYRIL ,  DETAVERNIER CHRISTOPHER ,  JAMMY RAJARAO ,  SAENGER KATHERINE

IPC: H01L21/8238 ,  C23C14/06 ,  C23C16/32 ,  H01L27/108 ,  H01L29/49

Abstract: A semiconductor device such as a complementary metal oxide semiconductor (CMOS) including at least one FET that includes a gate electrode including a metal carbide and method of fabrication are provided. The CMOS comprises dual work function metal gate electrodes whereby the dual work functions are provided by a metal and a carbide of a metal.