-
公开(公告)号：JP2000207727A
公开(公告)日：2000-07-28
申请号：JP35777399
申请日：1999-12-16
Applicant: IBM
Inventor： AHLERT RICHARD H , JAMES KENT HOWARD , LAMBERT STEVEN E , SANDERS IAN L
Abstract: PROBLEM TO BE SOLVED: To reduce inherent medium noise significantly under a high line recording density by employing a laminate structure of a relatively thin CoPt alloy magnetic film or a CoNi alloy magnetic film separated by a relatively thin nonmagnetic spacer film. SOLUTION: Surface of a substrate is cleaned by RF discharge and a lower layer (300-400 Å thick) of Mo, Cr or CrV is attached by sputtering before being laminated with a magnetic layer. Subsequently, a magnetic layer (magnetic film and spacer) is attached through sputtering by changing the sputtering source to form a laminate structure. Effect of lamination on a signal is minimized and noise reduction is enhanced significantly as the number of laminated films increases. A laminate structure CoPt alloy disc thus produced exhibits excellent low noise characteristic as compared with a single thick CoPt alloy film.
-
公开(公告)号：CA2054580C
公开(公告)日：1994-05-03
申请号：CA2054580
申请日：1991-10-31
Applicant: IBM
Inventor： DIENY BERNARD , GURNEY BRUCE A , LAMBERT STEVEN E , MAURI DANIELE , PARKIN STUART S P , SPERIOSU VIRGIL S , WILHOIT DENNIS R
Abstract: MAGNETORESISTIVE SENSOR BASED ON THE SPIN VALVE EFFECT A magnetoresistive (MR) sensor comprising a first and a second thin film layer of a magnetic material separated by a thin film layer of a non-magnetic metallic material. The first ferromagnetic layer is magnetically soft. The magnetization direction of the first layer of magnetic material is set substantially perpendicular to the magnetization of the second layer of magnetic material at zero applied field, and the magnetization direction of the second layer of magnetic material is fixed. A current flow is produced through the MR sensor, and the variations in voltage across the MR sensor are sensed due to changes in resistance of the MR sensor produced by rotation of the magnetization in the first layer of magnetic material as a function of the magnetic field being sensed. The variation of the resistance with the angle between the magnetizations of the first and second layers of magnetic material has been defined as the spin valve (SV) effect. It is also shown that, by a suitable direction of the current with respect to the fixed magnetization, the (SV) magnetoresistance can be added constructively to the usual anisotropic magnetoresistance.
-
公开(公告)号：CA2054580A1
公开(公告)日：1992-06-12
申请号：CA2054580
申请日：1991-10-31
Applicant: IBM
Inventor： DIENY BERNARD , GURNEY BRUCE A , LAMBERT STEVEN E , MAURI DANIELE , PARKIN STUART S P , SPERIOSU VIRGIL S , WILHOIT DENNIS R
Abstract: A magnetoresistive (MR) sensor is disclosed which comprises a first and a second thin film layer of a magnetic material separated by a thin film layer of a non-magnetic metallic material. The first ferromagnetic layer is magnetically soft. The magnetization direction of the first layer of magnetic material is set substantially perpendicular to the magnetization of the second layer of magnetic material at zero applied field, and the magnetization direction of the second layer of magnetic material is fixed. A current flow is produced through the MR sensor, and the variations in voltage across the MR sensor are sensed due to changes in resistance of the MR sensor produced by rotation of the magnetization in the first layer of magnetic material as a function of the magnetic field being sensed. The variation of the resistance with the angle between the magnetizations of the first and second layers of magnetic material has been defined as the spin valve (SV) effect. It is also shown that, by a suitable direction of the current with respect to the fixed magnetization, the (SV) magnetoresistance can be added constructively to the usual anisotropic magnetoresistance.
-
-
Search Results
3
records
(took 0.017 seconds)
