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公开(公告)号：JPH1091923A
公开(公告)日：1998-04-10
申请号：JP21464497
申请日：1997-08-08
Applicant: IBM
Inventor： GILL HARDAYAL SINGH , GURNEY BRUCE A , SMYTH JOSEPH FRANCIS , SPERIOSU VIRGIL SIMON , WERNER DOUGLAS JOHNSON
Abstract: PROBLEM TO BE SOLVED: To provide an orthogonal spin valve reading head having a spin valve sensor. SOLUTION: Spin valve sensors are arranged between a first and a second shield layers S1, S2 asymmetrically, when a detecting current is made to flow, a restriction magnetic fields by an anti-ferroelectric layer 74, a pin holding layer 72 and a spacer layer 76 partially or completely canceled by an induction magnetic field generated by a current induced in both shield layers when a detecting current is made to flow. The distance between a sensor and the second shield layer S2 is enlarged by providing an intermediate gap layer MG between spin valve sensors and the second shield layer S2.
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公开(公告)号：CA2054580C
公开(公告)日：1994-05-03
申请号：CA2054580
申请日：1991-10-31
Applicant: IBM
Inventor： DIENY BERNARD , GURNEY BRUCE A , LAMBERT STEVEN E , MAURI DANIELE , PARKIN STUART S P , SPERIOSU VIRGIL S , WILHOIT DENNIS R
Abstract: MAGNETORESISTIVE SENSOR BASED ON THE SPIN VALVE EFFECT A magnetoresistive (MR) sensor comprising a first and a second thin film layer of a magnetic material separated by a thin film layer of a non-magnetic metallic material. The first ferromagnetic layer is magnetically soft. The magnetization direction of the first layer of magnetic material is set substantially perpendicular to the magnetization of the second layer of magnetic material at zero applied field, and the magnetization direction of the second layer of magnetic material is fixed. A current flow is produced through the MR sensor, and the variations in voltage across the MR sensor are sensed due to changes in resistance of the MR sensor produced by rotation of the magnetization in the first layer of magnetic material as a function of the magnetic field being sensed. The variation of the resistance with the angle between the magnetizations of the first and second layers of magnetic material has been defined as the spin valve (SV) effect. It is also shown that, by a suitable direction of the current with respect to the fixed magnetization, the (SV) magnetoresistance can be added constructively to the usual anisotropic magnetoresistance.
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公开(公告)号：SG43377A1
公开(公告)日：1997-10-17
申请号：SG1996010141
申请日：1996-06-24
Applicant: IBM
Inventor： GILL HARDAYAL SINGH , GURNEY BRUCE A
Abstract: A magnetoresistive (MR) sensor comprises a dual differential spin valve structure. Each of the spin valves comprise first (free) and second (pinned) layers of ferromagnetic material separated by a thin film layer of nonmagnetic material. The magnetization direction of the pinned layers of ferromagnetic material in each spin valve is fixed, and their magnetization is set antiparallel to each other. A current flow is produced through the MR sensor, and the variations in voltage across the MR sensor are sensed due to changes in resistance of the MR sensor produced by rotation of the magnetization in the free layers of ferromagnetic material as a function of the magnetic field being sensed.
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公开(公告)号：CA2054580A1
公开(公告)日：1992-06-12
申请号：CA2054580
申请日：1991-10-31
Applicant: IBM
Inventor： DIENY BERNARD , GURNEY BRUCE A , LAMBERT STEVEN E , MAURI DANIELE , PARKIN STUART S P , SPERIOSU VIRGIL S , WILHOIT DENNIS R
Abstract: A magnetoresistive (MR) sensor is disclosed which comprises a first and a second thin film layer of a magnetic material separated by a thin film layer of a non-magnetic metallic material. The first ferromagnetic layer is magnetically soft. The magnetization direction of the first layer of magnetic material is set substantially perpendicular to the magnetization of the second layer of magnetic material at zero applied field, and the magnetization direction of the second layer of magnetic material is fixed. A current flow is produced through the MR sensor, and the variations in voltage across the MR sensor are sensed due to changes in resistance of the MR sensor produced by rotation of the magnetization in the first layer of magnetic material as a function of the magnetic field being sensed. The variation of the resistance with the angle between the magnetizations of the first and second layers of magnetic material has been defined as the spin valve (SV) effect. It is also shown that, by a suitable direction of the current with respect to the fixed magnetization, the (SV) magnetoresistance can be added constructively to the usual anisotropic magnetoresistance.
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