SHIELDED MAGNETIC TUNNEL JUNCTION MAGNETO-RESISTIVE READ HEAD AND ASSEMBLY

    公开(公告)号:JP2002304711A

    公开(公告)日:2002-10-18

    申请号:JP2001389357

    申请日:2001-12-21

    Applicant: IBM

    Abstract: PROBLEM TO BE SOLVED: To provide an MR read head having an MTJ device formed to be sufficiently thin for attaining the high surface density by reducing the space between magnetic shields. SOLUTION: As to the magnetic tunnel junction MTJ device 100, the magneto-resistive(MR) read head has the MTJ device 100 located between two spaced-apart magnetic shields S1, S2. The magnetic shields function also as electrical leads for connecting the head to a detection circuit. Conductive spacer layers 102, 104 are located at the top and bottom of the MTJ device 100 to connect the MTJ device 100 to the shields. The thickness of the spacer layer is selected to optimize the spacing between the shields. Each of the shields has the pedestal region for reducing the electric short-circuit between the shields in the case the space between the shields is too small, and the MTJ device 100 is located between these two pedestals.

    SHIELD TYPE MAGNETIC TUNNEL JUNCTION MAGNETO-RESISTANCE READ HEAD AND ASSEMBLY

    公开(公告)号:JPH11213351A

    公开(公告)日:1999-08-06

    申请号:JP28902098

    申请日:1998-10-12

    Applicant: IBM

    Abstract: PROBLEM TO BE SOLVED: To reduce the gap between magnetic shields to obtain a high surface density. SOLUTION: The magnetic shield enables a head to detect each magnetic transition from a magnetic recording medium without interference of adjacent transitions and functions as an electric lead which connects the head to a detection circuit. Conductive spacer layer 102 and 104 are arranged above and below an MTJ(magnetic tunnel junction) element to connect the MTJ element to the shield. The thickness of spacer layere 102 and 104 are selected so as to optimize the gap between shields. This thickness is a parameter which controls the linear resolution of data read from the magnetic recording medium. If the gap between shields is narrow, each shield has a pedestal area for the purpose of reducing a possibility of electric short-circuit between shields, and the MTJ element can be arranged between these two pedestals. In this case, the gap between shields on the outside of pedestals is larger than the inside of pedestal areas.

    4.
    发明专利
    未知

    公开(公告)号:DE3483495D1

    公开(公告)日:1990-12-06

    申请号:DE3483495

    申请日:1984-04-25

    Applicant: IBM

    Abstract: A communicating random access shared memory configuration for a multiprocessor system is connected to the processors for transferring data between the processors. The random access memory configuration includes a plurality of interconnected random access memory chips, each of these memory chips including first and second separate memory bit arrays having N word storage locations of M bit length with M bit buffer means connected in between the first and second bit arrays of each memory chip, and first and second input/output ports connected to first and second bit arrays on each chip for entering and removing data externally to and from the chip. A control means is located on each chip and connected to the first and second memory arrays and the M bit buffer means for transferring data between the first and second memory arrays and into and out of the first and second input/output ports.

    CIRCUITS FOR ACCESSING A VARIABLE WIDTH DATA BUS WITH A VARIABLE WIDTH DATA FIELD

    公开(公告)号:DE3380572D1

    公开(公告)日:1989-10-19

    申请号:DE3380572

    申请日:1983-06-01

    Applicant: IBM

    Abstract: A general bit manipulator structure for parallel accessing a variable width data bus wherein, with a data bus of variable width N c and a data field of N f , the structure can place the data field on the data bus with bit 1 of the data field aligned with a selected bit n within the data bus width. If the data field N f extends beyond the end of the data bus, the overflow bits of the data field are "wrapped around" and placed at the beginning of the data bus starting at position 1 of the data bus. Also, special signals are generated and accompany these overflow or wrapped bits. Furthermore, select signals are generated to indicate which bits of the data bus contain valid data when the width of the data field is less than the width of the data bus. Structure includes a modulo N c combinational ring shifter for aligning the data field with the data bus. An overflow signal generator is provided using a subtraction circuit wherein the data field width is subtracted from the data bus width between alignment bit n and the end bit N c . A negative subtraction result indicates overflow and the magnitude of the result specifies the bit positions from bit 1 of the data bus for the wrapped around bits. A select signal generator including two decoders is provided to indicate the valid data bit positions of the data bus.

    6.
    发明专利
    未知

    公开(公告)号:DE2536263A1

    公开(公告)日:1976-03-25

    申请号:DE2536263

    申请日:1975-08-14

    Applicant: IBM

    Abstract: A method and apparatus for locating target patterns with reference to a fixed axis. The apparatus includes a collimated light source providing a light beam to a rotating prism and optical flat producing a rotating light beam. A lens whose axis is the fixed axis focuses the beam to a spot on a surface containing a pattern comprising regularly spaced light scattering surfaces. A light sensor detects light from the rotating beam scattered by the target. An incremental shaft encoder provides a real time indication of spot position. The light sensor output provides a measure of target location and orientation with reference to the lens axis. The encoder can be used to control sampling apparatus and an A/D converter to provide regular digital samples of the light sensor output.

    9.
    发明专利
    未知

    公开(公告)号:DE1278037B

    公开(公告)日:1968-09-19

    申请号:DEJ0024771

    申请日:1963-11-22

    Applicant: IBM

    Abstract: 995,715. Lasers. INTERNATIONAL BUSINESS MACHINES CORPORATION. Nov. 18, 1963 [Nov. 30, 1962], No. 45355/63. Heading H3B. [Also in Division H1] An injection laser has an action region with a cross - sectional shape perpendicular to its smallest dimension, in the form of a regular polygon, all the side faces being optically flat. A cross - section of a rectangular parallelepipedal GaAs crystal, having electrodes at each end and a PN junction in the middle, is shown in Fig. 2. Rays following paths 21, 21a, 21b, meeting crystal surfaces 22, 24, 26 and 28 at 45 degrees are totally reflected. The crystal provides a high Q for such rays and these modes are preferentially established. Once established such modes are maintained at the expense of other modes. The crystal may be surrounded by a material having a refractive index between that of the crystal and air, to modify the internal reflection properties. Other crosssectional geometries shown are triangular and hexagonal. In the latter case (Fig. 5) three modes 46, 48, 50 are possible. Modes 48, 50 may be suppressed by using a material of sufficiently low refractive index, or mode 46 may be suppressed by notching crystal 44 at its vertices. Modes 48 and 50 are optically independent. Light may be coupled out of a crystal by means of a suitably shaped body (Fig. 4, not shown) of refractive index close to that of the crystal, placed within one wavelength of the crystal. The rays may be concentrated into a single beam. Alternatively a protuberance or groove may be provided at a crystal surface for extracting the radiation. The ratio of the refractive index of the crystal to that of the surrounding medium, for optimum mode selection, should be where N is the number of sides of the polygon formed by the cross-section.

    Shielded magnetic tunnel junction magnetoresistive read head

    公开(公告)号:SG67574A1

    公开(公告)日:1999-09-21

    申请号:SG1998004212

    申请日:1998-10-15

    Applicant: IBM

    Abstract: A magnetic tunnel junction (MTJ) magnetoresistive read head for a magnetic recording system has the MTJ device (110,120,130) located between two spaced-apart magnetic shields (S1,S2). The magnetic shields, which allow the head to detect individual magnetic transitions from the magnetic recording medium without interference from neighboring transitions. also function as electrical leads for connection of the head to sense circuitry. Electrically conductive spacer layers (102,104) are located at the top and bottom of the MTJ device and connect the MTJ device to the shields. The thickness of the spacer layers is selected to optimize the spacing between the shields, which is a parameter that controls the linear resolution of the data that can be read from the magnetic recording medium. To reduce the likelihood of electrical shorting between the shields if the shield-to-shield spacing is too small, each of the shields can have a pedestal region (161,163) with the MTJ device located between the two pedestals, so that the shield-to-shield spacing outside the pedestal regions is greater than in the pedestal regions.

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