公开(公告)号：JPH07302888A

公开(公告)日：1995-11-14

申请号：JP9707195

申请日：1995-04-21

Applicant: IBM

Inventor： JIEROOMU JIYON KUOMO ,  RICHIYAADO JIYOOZEFU GANBIINO ,  ARUFURETSUDO GURIRU ,  UIRIAMU FURANSHISU KEEN ,  DONARUDO JIYOOZEFU MIKARUSEN

IPC: H01L27/04 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108 ,  H01L27/115

Abstract: PURPOSE: To prevent the diffusion of oxygen to an F-part semiconductor, and prevent the diffusion of semiconductor atoms into high permittivity material, by providing this capacitor with a specified metallic layer such that, it ohm- contacts with a semiconductor region, and providing this with its metallic oxide layer such that it ohm-contacts with this layer. CONSTITUTION: The lower electrode structure 14 of a capacitor 10 contains three layers. That is, the first layer 31 contains Ru, Ir, Re, Rh, Os, Pd, and any one of those alloys made to ohm-contact with a semiconductor region 26, on the semiconductor region 26 and a dielectric layer 20. The second layer 32 contains any one of the oxides of the first layer 31 metal made to ohm- contact with the first layer 31. The third layer 33 includes Pt, Au, Ru, Ir, Re, Rh, Os, and Pd, which are made to ohm-contact with the second layer 32 on the dielectric layer 20 on the second layer 32 and the dielectric layer 20, and any one of those alloys.

公开(公告)号：JPH0621140A

公开(公告)日：1994-01-28

申请号：JP5843993

申请日：1993-03-18

Applicant: IBM

Inventor： MAIKERU JIYON BURADEII ,  KAACHISU EDOWAADO FUARERU ,  SUN KUON KAN ,  JIEFURII ROBAATO MARINO ,  DONARUDO JIYOOZEFU MIKARUSEN ,  POORU ANDORIYUU MOSUKOUITSUTSU ,  YUUJIN JIYON OSARIBAN ,  TERENSU ROBAATO OTOUURU ,  SANPASU PURUSHIYOTAMAN ,  SHIERUDON KOORU RIIREI ,  JIYOOJI FUREDERITSUKU UOOKAA

IPC: H01L21/60 ,  C23C18/50 ,  C25D3/54 ,  H01L21/288 ,  H01L21/603 ,  H01L21/768 ,  H01L23/495 ,  H01L23/498 ,  H01L23/532 ,  H01L21/321

Abstract: PURPOSE: To replace a structural material for forming an electric mutual connection with a semiconductor chip for an inexpensive substitute for gold by providing a metallurgical structure, including a material containing silicon and germanium. CONSTITUTION: For example, it is desired that a pad is provided with surface metallurgically wetted by solder for bonding, so that a chip with solder mound such as C4 can be connected with a substrate like the pad on a package substrate. Then, a passivation state layer 8 constituted of an organic material or an inorganic material is formed in the surrounding of an electric conductor 4 made of an Al/Cu material, while an exposed region 10 of the electric conductor 4 is left. A layer constituted of a material 12, including silicon or germanium, is arranged on the passivation state layer 8 so as to be brought in contact with the exposed region 10. Thus, aluminum oxide or copper oxide can be removed from the surface of the contact pad, the increase in a contact resistance can be suppressed, and Cu can be prevented from being dispersed in a silicon substrate 2.