公开(公告)号：JPH0621140A

公开(公告)日：1994-01-28

申请号：JP5843993

申请日：1993-03-18

Applicant: IBM

Inventor： MAIKERU JIYON BURADEII ,  KAACHISU EDOWAADO FUARERU ,  SUN KUON KAN ,  JIEFURII ROBAATO MARINO ,  DONARUDO JIYOOZEFU MIKARUSEN ,  POORU ANDORIYUU MOSUKOUITSUTSU ,  YUUJIN JIYON OSARIBAN ,  TERENSU ROBAATO OTOUURU ,  SANPASU PURUSHIYOTAMAN ,  SHIERUDON KOORU RIIREI ,  JIYOOJI FUREDERITSUKU UOOKAA

IPC: H01L21/60 ,  C23C18/50 ,  C25D3/54 ,  H01L21/288 ,  H01L21/603 ,  H01L21/768 ,  H01L23/495 ,  H01L23/498 ,  H01L23/532 ,  H01L21/321

Abstract: PURPOSE: To replace a structural material for forming an electric mutual connection with a semiconductor chip for an inexpensive substitute for gold by providing a metallurgical structure, including a material containing silicon and germanium. CONSTITUTION: For example, it is desired that a pad is provided with surface metallurgically wetted by solder for bonding, so that a chip with solder mound such as C4 can be connected with a substrate like the pad on a package substrate. Then, a passivation state layer 8 constituted of an organic material or an inorganic material is formed in the surrounding of an electric conductor 4 made of an Al/Cu material, while an exposed region 10 of the electric conductor 4 is left. A layer constituted of a material 12, including silicon or germanium, is arranged on the passivation state layer 8 so as to be brought in contact with the exposed region 10. Thus, aluminum oxide or copper oxide can be removed from the surface of the contact pad, the increase in a contact resistance can be suppressed, and Cu can be prevented from being dispersed in a silicon substrate 2.

公开(公告)号：JPH09181125A

公开(公告)日：1997-07-11

申请号：JP29996296

申请日：1996-11-12

Applicant: IBM

Inventor： PANAYOTEISU KONSUTANTEINUU AND ,  MADABU DATSUTA ,  HARIKURIA DERIJIYANNI ,  UIRUMA JIYAN HOOKANZU ,  SUN KUON KAN ,  KIISU TOMASU KUFUIETONIYAKU ,  GANGADAARA SUWAMI MATADO ,  SANPASU PURUSHIYOTAMAN ,  RIIZEN SHII ,  TON HOO MIN

IPC: B23K35/26 ,  B23K35/00 ,  B32B15/01 ,  C22C13/00 ,  C22C13/02 ,  H01L21/60 ,  H01L23/485 ,  H01L21/321

Abstract: PROBLEM TO BE SOLVED: To provide a connecting structure suitable for connecting a very small electronic circuit chip with a package. SOLUTION: This mutual connecting structure contains the following in order; an adhesion/barrier layer stuck on a passivated board (e.g. silicon wafer), an adhesion layer which is arbitrarily selected and added, a layer to which metal selected out of a group composed of Ni, Co, Fe, NiFe, NiCo, CoFe, NiCoFe can be soldered, and a leadless solder ball which contains a kind or a plurality of kinds of alloy elements selected out of tin, Bi, Ag and Sb which are main components and a kind or a plurality of kinds of elements arbitrarily selected out of a group composed of Zn, In, Ni, Co and Cu.

公开(公告)号：JPH04356937A

公开(公告)日：1992-12-10

申请号：JP3667091

申请日：1991-02-07

Applicant: IBM

Inventor： UIRIAMU DEIIN BURUUA ,  KURUTO RUDORUFU GUREEBE ,  REIMONDO ROBAATO HOOTON ,  RINDA KARORIN MASHIYUU ,  IZUMEERU SEBUDETO NOIYAN ,  MAIKERU JIYON PAAMAA ,  SANPASU PURUSHIYOTAMAN ,  DEBITSUDO RII RASU

IPC: H01L21/60 ,  H01L21/48 ,  H01L23/498 ,  H01L23/50 ,  H05K1/00 ,  H05K1/09 ,  H05K3/24

Abstract: PURPOSE: To provide a composition and coating for preventing the generation of electrolytic migration between tape automated bonding(TAB) package leads. CONSTITUTION: A nickel alloy protection coating 15 is applied to an alloy composition or a copper-made current carrying lead 13 containing copper/nickel. Consequently the formation of a dendrite between TAB package leads can be prevented.