公开(公告)号：JPH0620277A

公开(公告)日：1994-01-28

申请号：JP9945193

申请日：1993-04-26

Applicant: IBM

Inventor： MAIKERU JIYON BURADEII ,  BODEIRU ERIZABESU BURAAREN ,  RICHIYAADO JIEI GANBIINO ,  ARUFURETSUDO GURIRU ,  BUISHIYUNUBAAI BUITSUTARUBAAI

IPC: B41M5/26 ,  G11B7/00 ,  G11B7/0045 ,  G11B7/0055 ,  G11B7/24 ,  G11B7/243 ,  G11B7/258 ,  G11B7/30

Abstract: PURPOSE: To enable a focused light beam to be used as a heat source by heating the prescribed region of an amorphous solid provided with a first refractive index and converting it into a second refractive index. CONSTITUTION: This optical storage device 40 is provided with a motor 52 and designed to move a disk 48 having a write laser 44, a read laser 46 and a storage medium 50. In addition, the laser 44 is provided with a function for supplying a laser beam 58 to the upper face 60 of the disk 48 through a lens 59. Then, an amorphous solid is selected that has a first refractive index, the lens 59 supplying a laser beam 61 focused on the surface 60 of the disk 48. As a result, with the prescribed region of the amorphous solid heated by the beam 61, the refractive index is converted to a second refractive index. Consequently, using a material with a sufficiently high crystallizing temperature or a melting point, the amorphous can be converted without overwriting through the crystallization of the material. Incidentally, reading is possible repeatedly by writing this information on a carbon film.

公开(公告)号：JPH0573989A

公开(公告)日：1993-03-26

申请号：JP4345592

申请日：1992-02-28

Applicant: IBM

Inventor： MAIKERU JIYON BURADEII ,  SUTEIIBUN SAIMON DANA ,  RICHIYAADO JIYOSEFU GANBINO

IPC: G11B11/10 ,  G11B5/00 ,  G11B5/49 ,  G11B11/105 ,  G11B11/11 ,  G11C11/14

Abstract: PURPOSE: To provide a magneto-optical thin film memory improved in output signal level. CONSTITUTION: A memory shows a favorable orientation in the area, and includes a magnetostrictive, anistropic and ferromagnetic film 12 which is initially polarized unidirectionally along the orientation. A magnetic field insufficient to change over the polarized area is impressed in the opposite direction of the above unidirectional direction. An electrostrivtive film 10 is arranged in contact with a ferromagnetic layer 12, and in order to impart a stress on a selected position 20 where the electrostrictive film is energized, the device is provided with a writing device using laser 16, etc. An induced stress reduces anistropic energy of the ferromagnetic film at the selected position, so that the area is magnetically polarized according to the imparted magnetic field.

公开(公告)号：JPS6345826A

公开(公告)日：1988-02-26

申请号：JP12727687

申请日：1987-05-26

Applicant: IBM

Inventor： MAIKERU JIYON BURADEII ,  SANGU KUUON KANGU ,  POORU ANDORIYUU MOSUKOUITSUTSU ,  JIEEMUZU GAADONAA RAIAN ,  TEIMOSHII KURAAKU REIRII ,  ERITSUKU GUREGORI UORUTON ,  HARII RANDOORU BITSUKUFUOODO ,  MAIKERU JIYON PAAMAA

IPC: H01L21/60 ,  H01L23/485

公开(公告)号：JPH06326263A

公开(公告)日：1994-11-25

申请号：JP5031194

申请日：1994-03-22

Applicant: IBM

Inventor： MAIKERU JIYON BURADEII ,  RICHIYAADO JIYOOZEFU GANBIINO ,  RIA KURUSHIN ERUBAUMU ,  RARUFU AARU RUFU

IPC: H01L27/10 ,  G11C11/14 ,  G11C11/18 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/105 ,  H01L29/788 ,  H01L29/792 ,  H01L43/06

Abstract: PURPOSE: To obtain an extremely stout non-volatile random access memory by activating a current line by a voltage on a word line and allowing a current to flow into a Hall effect device by turning on a switch and then detecting the magnetic state of the Hall effect device by measuring the voltage on a bit line. CONSTITUTION: When a proper voltage is turned on a word line 16, a MOS transistor 18 conducts and a current flows from a lead line 20 to the ground potential via the MOS transistor 18 and a Hall effect device 12. Bit lines 34 and 36 detect a voltage between both terminals of the Hall effect device 12 at terminals 35 and 37, thus indicating data stored in a selective Hall effect device and hence obtaining an extremely stout non-volatile random access memory since no movable parts exist.

公开(公告)号：JPH0621140A

公开(公告)日：1994-01-28

申请号：JP5843993

申请日：1993-03-18

Applicant: IBM

Inventor： MAIKERU JIYON BURADEII ,  KAACHISU EDOWAADO FUARERU ,  SUN KUON KAN ,  JIEFURII ROBAATO MARINO ,  DONARUDO JIYOOZEFU MIKARUSEN ,  POORU ANDORIYUU MOSUKOUITSUTSU ,  YUUJIN JIYON OSARIBAN ,  TERENSU ROBAATO OTOUURU ,  SANPASU PURUSHIYOTAMAN ,  SHIERUDON KOORU RIIREI ,  JIYOOJI FUREDERITSUKU UOOKAA

IPC: H01L21/60 ,  C23C18/50 ,  C25D3/54 ,  H01L21/288 ,  H01L21/603 ,  H01L21/768 ,  H01L23/495 ,  H01L23/498 ,  H01L23/532 ,  H01L21/321

Abstract: PURPOSE: To replace a structural material for forming an electric mutual connection with a semiconductor chip for an inexpensive substitute for gold by providing a metallurgical structure, including a material containing silicon and germanium. CONSTITUTION: For example, it is desired that a pad is provided with surface metallurgically wetted by solder for bonding, so that a chip with solder mound such as C4 can be connected with a substrate like the pad on a package substrate. Then, a passivation state layer 8 constituted of an organic material or an inorganic material is formed in the surrounding of an electric conductor 4 made of an Al/Cu material, while an exposed region 10 of the electric conductor 4 is left. A layer constituted of a material 12, including silicon or germanium, is arranged on the passivation state layer 8 so as to be brought in contact with the exposed region 10. Thus, aluminum oxide or copper oxide can be removed from the surface of the contact pad, the increase in a contact resistance can be suppressed, and Cu can be prevented from being dispersed in a silicon substrate 2.