公开(公告)号：JPH08100263A

公开(公告)日：1996-04-16

申请号：JP23031795

申请日：1995-09-07

Applicant: IBM

Inventor： SUTEIIBUN JIYOOJI BAABII ,  RICHIYAADO ANSONII KONTEI ,  AREKISANDAA KOSUTENKO ,  NARAYANA BUI SAAMA ,  DONARUDO RESURII UIRUSON ,  JIYASUTEIN WAIICHIYOU UON ,  SUTEIIBUN POORU ZUHOSUKII

IPC: C23C16/40 ,  C23C16/46 ,  C23C16/52 ,  H01L21/205 ,  H01L21/31

公开(公告)号：JPH07302759A

公开(公告)日：1995-11-14

申请号：JP3195295

申请日：1995-02-21

Applicant: IBM

Inventor： JIYONASAN DANIERU CHIYATSUPURU ,  RICHIYAADO ANSONII KONCHI ,  JIEEMUZU ANSONII ONIIRU ,  NARAYAANA BUII SARUMA ,  DONARUDO RESURII UIRUSON ,  JIYASUTEIN WAI CHIYOU UON

IPC: H01L21/205 ,  C23C16/40 ,  C23C16/44 ,  C23C16/448 ,  C23C16/52

Abstract: PURPOSE: To adjust a vapor send-out system, by bringing out a control signal for sending aluminum triisopropoxide(ATI) to a reactor or an exhaust pipe, by using a Fourier transform infrared(FTIR) spectrometer, in response to presence of contaminants and decomposition products in vapor stream. CONSTITUTION: When an FTIR spectrometer 5 analyzes reaction product vapor flowing in an IR cell 14, an information which shows whether contaminates or decomposition products exist is give to a process controller. Depending upon the composition of reaction product vapor which is harmful to a reactor or a workpiece in the reactor, the controller operates a valve 7, and stream of the reaction product vapor is changed so as to make it flow from a pipe 12 to a pump 13. When composition of the reaction product vapor is proper, the valve 7 is operated, and the reception product vapor is sent from a pipe 10 to a CVD reactor 11 to be fraught into reaction with the workpiece 15. Thereby, the reactor and the workpiece can be protected from the contaminants.

公开(公告)号：JPH07193016A

公开(公告)日：1995-07-28

申请号：JP26428094

申请日：1994-10-27

Applicant: IBM

Inventor： SUTEIIBUN JIYOOJI BAABII ,  JIYONASAN DANIERU CHIYAPURUUSO ,  RICHIYAADO ANSONII KONTEI ,  DEBITSUDO EDOWAADO KOTEKI ,  DONARUDO RESURII UIRUSON ,  JIYASUTEIN WAIICHIYOO UON ,  SUTEIIBUN POORU ZUOSUKI

IPC: C23C16/44 ,  C23C16/455 ,  C30B25/14 ,  H01L21/205

Abstract: PURPOSE: To improve the thickness and uniformity of the characteristics of a deposited film. CONSTITUTION: A CVD has a nozzle 52 and equalizing means 54 for equalizing the chemical reaction and the flow of reaction material. The nozzle 52, which introduces reaction vapor into a chamber 15, is provided opposite to a susceptor 14 which holds a substrate in the chamber upon film formation by chemical deposition from the reaction vapor to the surface of the substrate. The nozzle 52 has an inlet port 58 for receiving the reaction vapor from a vapor-supply side, and an outlet port 60 for passing and discharging the reaction vapor. The equalizing means 54 is characterized by a plate 62 having a shape determined depending on the profile of the flow of the reaction material in the chamber. The equalizing means 54 acts to uniformize chemical reaction on the surface of the substrate and the flow of the reaction material, by using the shape of the plate 62.