公开(公告)号：JPH05217997A

公开(公告)日：1993-08-27

申请号：JP28999292

申请日：1992-10-28

Applicant: IBM

Inventor： JIYONASAN DANIERU CHIYAPURU SO ,  RICHIYAADO ANSONII KONTEI ,  DEEBITSUDO EDOWAADO KOTETSUKI ,  ANDORIYUU HAABAATO SAIMON

IPC: H01L21/306 ,  H01L21/302 ,  H01L21/3065

Abstract: PURPOSE: To safely and effectively remove a natural SiO2 layer on an Si surface, using anhydrous ammonium fluoride. CONSTITUTION: Anhydrous ammonium fluoride and Si substrate, having a natural SiO2 layer to be etched, are prepared in an etching chamber. The anhydrous ammonium fluoride is heated at a temp. higher than its sublimating point to produce an HF gas, which etches a silicon diode.

公开(公告)号：JPH07188932A

公开(公告)日：1995-07-25

申请号：JP25699394

申请日：1994-10-21

Applicant: IBM

Inventor： JIEEMUZU ANSONII ONIIRU ,  MAIKERU REEN PATSUSOU ,  TEINA JIEEN KOTORAA ,  JIYONASAN DANIERU CHIYATSUPURU ,  RICHIYAADO ANSONII KONTEI ,  JIYOISHI SHIN

IPC: G01N21/33 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  C23F4/00 ,  G01N21/35 ,  H01L21/205 ,  H01L21/302 ,  H01L21/31 ,  H01L31/00 ,  H01L21/3065

公开(公告)号：JPH07193016A

公开(公告)日：1995-07-28

申请号：JP26428094

申请日：1994-10-27

Applicant: IBM

Inventor： SUTEIIBUN JIYOOJI BAABII ,  JIYONASAN DANIERU CHIYAPURUUSO ,  RICHIYAADO ANSONII KONTEI ,  DEBITSUDO EDOWAADO KOTEKI ,  DONARUDO RESURII UIRUSON ,  JIYASUTEIN WAIICHIYOO UON ,  SUTEIIBUN POORU ZUOSUKI

IPC: C23C16/44 ,  C23C16/455 ,  C30B25/14 ,  H01L21/205

Abstract: PURPOSE: To improve the thickness and uniformity of the characteristics of a deposited film. CONSTITUTION: A CVD has a nozzle 52 and equalizing means 54 for equalizing the chemical reaction and the flow of reaction material. The nozzle 52, which introduces reaction vapor into a chamber 15, is provided opposite to a susceptor 14 which holds a substrate in the chamber upon film formation by chemical deposition from the reaction vapor to the surface of the substrate. The nozzle 52 has an inlet port 58 for receiving the reaction vapor from a vapor-supply side, and an outlet port 60 for passing and discharging the reaction vapor. The equalizing means 54 is characterized by a plate 62 having a shape determined depending on the profile of the flow of the reaction material in the chamber. The equalizing means 54 acts to uniformize chemical reaction on the surface of the substrate and the flow of the reaction material, by using the shape of the plate 62.

公开(公告)号：JPH08188878A

公开(公告)日：1996-07-23

申请号：JP25256195

申请日：1995-09-29

Applicant: IBM

Inventor： SUTEIIBUN JIYOOJI BAABII ,  JIYONASAN DANIERU CHIYATSUPURU ,  RICHIYAADO ANSONII KONTEI ,  RICHIYAADO SHIYAO ,  JIEEMUSU ANSONII ONEIRU ,  NARAYAANA BUII SARUMA ,  DONARUDO REZURII UIRUSON ,  JIYASUTEIN WAI CHIYOU UON ,  SUTEIIBUN POORU ZUHOSUKI

IPC: C23C16/40 ,  C23C16/448 ,  C23C16/52 ,  H01L21/205 ,  H01L21/31 ,  H01L21/316

公开(公告)号：JPH08100263A

公开(公告)日：1996-04-16

申请号：JP23031795

申请日：1995-09-07

Applicant: IBM

Inventor： SUTEIIBUN JIYOOJI BAABII ,  RICHIYAADO ANSONII KONTEI ,  AREKISANDAA KOSUTENKO ,  NARAYANA BUI SAAMA ,  DONARUDO RESURII UIRUSON ,  JIYASUTEIN WAIICHIYOU UON ,  SUTEIIBUN POORU ZUHOSUKII

IPC: C23C16/40 ,  C23C16/46 ,  C23C16/52 ,  H01L21/205 ,  H01L21/31

公开(公告)号：JPH0766300A

公开(公告)日：1995-03-10

申请号：JP16653894

申请日：1994-07-19

Applicant: IBM

Inventor： JIYONASAN DANIERU CHIYATSUPURU ,  RICHIYAADO ANSONII KONTEI ,  JIEFURII PIITAA GANBIINO

IPC: H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108

Abstract: PURPOSE: To obtain a simplified charge storage capacitor having a high dielectric constant dielectric by depositing a dielectric having high dielectric constant, selected from a group of Ta2 O5 , SrTiO3 and BaTiO3 , on a conductive oxide by CVD and then forming a counter electrode on the dielectric layer. CONSTITUTION: A conductive oxide 32 is deposited and a dielectric 34 having high dielectric constant is blanket deposited thereon. High dielectric constant dielectric of the dielectric layer 34 is selected from a group of tantalum oxide (Ta2 O5 ), strontium titanate (SrTiO3 ) and barium titanate (BaTiO3 ). The dielectric layer 34 is formed by CVD. A counter electrode layer 36 is then formed of tungsten (W), platinum (Pt) or titanium nitride (TiN) by CVD sputtering or deposition thus obtaining a simplified charge storage capacitor having a high dielectric constant dielectric.

公开(公告)号：JPH05226268A

公开(公告)日：1993-09-03

申请号：JP24770092

申请日：1992-09-17

Applicant: IBM

Inventor： SUTEIIBUN JIYOOJI BAABII ,  JIYONASAN DANIERU CHIYAPURU SO ,  RICHIYAADO ANSONII KONTEI ,  DEEBUITSUDO EDOWAADO KOTETSUKI

IPC: C23C16/52 ,  C23C16/44 ,  C23C16/455 ,  C30B25/14 ,  H01L21/205

Abstract: PURPOSE: To provide an injector, which is used in CVD and LPCV devices and improves the uniformity of a film attached on the entire surface of a single wafer. CONSTITUTION: A convex-wall surface 31 facing a susceptor 14 sends a vapor to the wafer which is supported with the susceptor. Laminar flow is generally formed along the entire surface of the wafer. This laminar flow prevents the formation of a recirculation in the region between the wafer and an injector 12, together with a convex side surface.