公开(公告)号：DE3477294D1

公开(公告)日：1989-04-20

申请号：DE3477294

申请日：1984-09-21

Applicant: IBM

Inventor： ELDRIDGE JEROME MICHAEL ,  HOMOLA ANDREW MARION

IPC: G11B5/82 ,  C09D5/23 ,  C09D161/04 ,  C09D163/00 ,  G11B5/702 ,  G11B5/73 ,  G11B5/84 ,  G11B5/842 ,  G11B5/70

Abstract: A hermetically encapsulated magnetic record member is produced by applying a liquid mixture containing one or more organometallic compounds, an organic solvent and magnetic particles to a thermally stable substrate, e.g. of silicon. The applied mixture is then heated to melt the glass in the organometallic compound so that upon cooling of the glass, the magnetic particles are encapsulated therein.

公开(公告)号：DE3575635D1

公开(公告)日：1990-03-01

申请号：DE3575635

申请日：1985-06-24

Applicant: IBM

Inventor： EASTMAN DEAN ERIC ,  ELDRIDGE JEROME MICHAEL ,  PETERSEN KURT EDWARD ,  OLIVE GRAHAM

IPC: F28F27/02 ,  H01L23/473 ,  H05K7/20 ,  H01L23/42 ,  H01L23/46

公开(公告)号：DE3268937D1

公开(公告)日：1986-03-20

申请号：DE3268937

申请日：1982-06-15

Applicant: IBM

Inventor： ELDRIDGE JEROME MICHAEL ,  LEE MICHAEL HEIWO ,  SCHWARTZ GERALDINE COGIN

IPC: C23F4/00 ,  C23C8/10 ,  C23F1/00 ,  C23F1/20 ,  H01L21/302 ,  H01L21/316 ,  C23C8/00 ,  C23F17/00 ,  C23C14/00

Abstract: Aluminium-based alloy films and metallization layers that are patterned by reactive ion etching (RIE) are passivated by etching surface portions of the films or layers with a phosphoric-chromic mixture to remove contaminants and then oxidizing the exposed surface portions in an oxygen atmosphere.

公开(公告)号：DE2964545D1

公开(公告)日：1983-02-24

申请号：DE2964545

申请日：1979-08-23

Applicant: IBM

Inventor： ELDRIDGE JEROME MICHAEL ,  LEE WEN-YAUNG ,  SCHWARTZ GERALDINE COGIN

IPC: H01L21/302 ,  C23C8/12 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/3213 ,  H01L23/52 ,  C23F7/06 ,  C23F1/00 ,  C23C15/00 ,  H01L21/88

Abstract: Aluminium microcircuits which have been prepared by reactive-ion etching are stablized against open circuits and short circuits by treating the microcircuits in an oxygen-containing atmosphere at a temperature of from 200 DEG C to 450 DEG C.