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    AN OPTICAL RAY DEFLECTION APPARATUS
    3.
    发明专利
    AN OPTICAL RAY DEFLECTION APPARATUS 未知

    公开(公告)号：DE3176288D1

    公开(公告)日：1987-08-06

    申请号：DE3176288

    申请日：1981-03-12

    Applicant: IBM

    Inventor： PETERSEN KURT EDWARD

    IPC: G02B26/08 ,  G02B26/10 ,  G03F7/20 ,  G09F9/37 ,  H04N1/113 ,  G02F1/29

    Abstract: Torsional type optical ray deflection apparatus comprises a pair of etched plates (10, 20), one ofthe plates (20) is made of single crystal semiconductor material such as silicon, and the other plate (10) is of a suitable-insulating material such as glass. The semiconductor plate (20) is etched to form an elongated bar (22, 30,24) of the material having a wider central portion (30) which forms a reflecting surface armature of suitable area suspended internally of the rectangular frame formed by the remainder of the semiconductor plate. The insulating plate (10) is etched to leave an annuloidal depression (12) centrally ofthe plate. An elongated land in the centre of the insulating plate underlies the reflecting surface area (30) to support the torsion bar-reflector structure in the direction normal to the longitudinal axis while allowing rotation about that axis. Planar electrodes (14,16) are laid down in the bottom of the depression in the insulating plate for exerting an electrostatic force between one of the electrodes and the semiconductor armature, thereby causing angular displacement about the longitudinal axis of the torsion bar which will deflect rays of light incident to the reflecting surface portion.

    CAPACITIVE PRESSURE TRANSDUCERS AND METHODS OF FABRICATING THEM
    4.
    发明专利
    CAPACITIVE PRESSURE TRANSDUCERS AND METHODS OF FABRICATING THEM 未知

    公开(公告)号：DE3173249D1

    公开(公告)日：1986-01-30

    申请号：DE3173249

    申请日：1981-08-11

    Applicant: IBM

    Inventor： PETERSEN KURT EDWARD

    IPC: G01L9/12 ,  G01L9/00 ,  H01L29/84

    Abstract: A capacitive pressure transducer comprises an electrically conductive diaphragm (24) of semiconductor material surrounded and supported by a body (20, 26) of semiconductor material and a perforated metallic membrane supported by the semiconductor body so that there is a hollow (46) between the diaphragm and the membrane. The diaphragm and the membrane respectively serve as the movable plate and the fixed plate of a capacitor, the capacitance of which varies in dependence on the pressures on opposite sides of the diaphragm. The transducer can be made by normal integrated circuit device fabrication steps and so the transducer and utilization circuitry can be fabricated in the same process into a single integrated semiconductor device.

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