公开(公告)号：DE2861363D1

公开(公告)日：1982-01-28

申请号：DE2861363

申请日：1978-10-04

Applicant: IBM

Inventor： NING TAK HUNG ,  OSBURN CARLTON MORRIS ,  YU HWA NIEN

IPC: H01L29/78 ,  H01L21/26 ,  H01L21/265 ,  H01L21/268 ,  H01L21/3105 ,  H01L21/336 ,  H01L21/326

公开(公告)号：DE2962270D1

公开(公告)日：1982-04-15

申请号：DE2962270

申请日：1979-04-23

Applicant: IBM

Inventor： NING TAK HUNG ,  YU HWA NIEN

IPC: H01L29/73 ,  H01L21/033 ,  H01L21/225 ,  H01L21/285 ,  H01L21/331 ,  H01L21/60 ,  H01L23/48 ,  H01L29/54 ,  H01L29/62

Abstract: A method consisting of a sequence of process steps for fabricating a bipolar transistor having base contacts formed of polysilicon material and an emitter contact formed of polysilicon material or metal. The emitter contact is self-aligned to the base contacts by the use of process steps wherein a single mask aperture is used for defining the base contacts and the emitter.

公开(公告)号：DE2756915A1

公开(公告)日：1978-07-06

申请号：DE2756915

申请日：1977-12-21

Applicant: IBM

Inventor： FANG FRANK FU ,  YU HWA NIEN

IPC: G11C11/401 ,  G11C16/04 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/78 ,  H01L31/00 ,  G11C17/00

公开(公告)号：CA735133A

公开(公告)日：1966-05-24

申请号：CA735133D

Applicant: IBM

Inventor： YU HWA NIEN

公开(公告)号：DE3064247D1

公开(公告)日：1983-08-25

申请号：DE3064247

申请日：1980-06-24

Applicant: IBM

Inventor： FETH GEORGE CLARENCE ,  NING TAK HUNG ,  TANG DENNY DUAN-LEE ,  WIEDMANN SIEGFRIED KURT ,  YU HWA NIEN

IPC: H01L29/73 ,  H01L21/285 ,  H01L21/331 ,  H01L21/60 ,  H01L21/8226 ,  H01L27/02 ,  H01L27/082 ,  H01L21/82

Abstract: Self-aligned semiconductor circuits and process for manufacturing the circuits in which a plurality of transistors (206, 208, 240; 206, 208, 242) is provided, the collector regions/contacts (240, 228; 242, 228) and the base regions/contacts (254, 252; 256, 252) being mutually self-aligned. In one embodiment, the collectors have conductive layer contacts (such as metal) and are self-aligned to polysilicon base contacts while in another embodiment the base contacts are comprised of a conductive (metal) layer while polysilicon is used for the collector contacts. The collectors (240, 242) of these transistors can be butted to a recessed field oxide (214) to reduce the extrinsic base area and to minimize excess charge storage in the base region (208). The base contacts, whether polysilicon or metal, etc., provide alternate base current paths so that the removal of the extrinsic base area does not adversely affect the total amount of base current which can flow.

公开(公告)号：DE2232765A1

公开(公告)日：1973-01-18

申请号：DE2232765

申请日：1972-07-04

Applicant: IBM

Inventor： HO IRVING TZE ,  YU HWA NIEN

IPC: H01L27/108 ,  H01L29/10 ,  H01L29/423 ,  G11C11/24

公开(公告)号：CA846994A

公开(公告)日：1970-07-14

申请号：CA846994D

Applicant: IBM

Inventor： FANG FRANK FU ,  YU HWA NIEN ,  YEH TSU-HSING

公开(公告)号：DE2325922A1

公开(公告)日：1974-01-24

申请号：DE2325922

申请日：1973-05-22

Applicant: IBM

Inventor： BEAUSOLEIL WILLIAM FRANCIS ,  HO IRVING TZE ,  YU HWA NIEN

IPC: G11C27/04 ,  G06F3/00 ,  G06F12/00 ,  G11C19/28 ,  H01L21/339 ,  H01L27/105 ,  H01L29/762 ,  G11C19/00

公开(公告)号：CA784897A

公开(公告)日：1968-05-07

申请号：CA784897D

Applicant: IBM

Inventor： YU HWA NIEN

公开(公告)号：CA749084A

公开(公告)日：1966-12-20

申请号：CA749084D

Applicant: IBM

Inventor： YU HWA NIEN

IPC: H01L31/00 ,  H01L31/06