公开(公告)号：DE3064247D1

公开(公告)日：1983-08-25

申请号：DE3064247

申请日：1980-06-24

Applicant: IBM

Inventor： FETH GEORGE CLARENCE ,  NING TAK HUNG ,  TANG DENNY DUAN-LEE ,  WIEDMANN SIEGFRIED KURT ,  YU HWA NIEN

IPC: H01L29/73 ,  H01L21/285 ,  H01L21/331 ,  H01L21/60 ,  H01L21/8226 ,  H01L27/02 ,  H01L27/082 ,  H01L21/82

Abstract: Self-aligned semiconductor circuits and process for manufacturing the circuits in which a plurality of transistors (206, 208, 240; 206, 208, 242) is provided, the collector regions/contacts (240, 228; 242, 228) and the base regions/contacts (254, 252; 256, 252) being mutually self-aligned. In one embodiment, the collectors have conductive layer contacts (such as metal) and are self-aligned to polysilicon base contacts while in another embodiment the base contacts are comprised of a conductive (metal) layer while polysilicon is used for the collector contacts. The collectors (240, 242) of these transistors can be butted to a recessed field oxide (214) to reduce the extrinsic base area and to minimize excess charge storage in the base region (208). The base contacts, whether polysilicon or metal, etc., provide alternate base current paths so that the removal of the extrinsic base area does not adversely affect the total amount of base current which can flow.