公开(公告)号：AT450892T

公开(公告)日：2009-12-15

申请号：AT04822326

申请日：2004-12-15

Applicant: IBM

Inventor： CHAN VICTOR ,  FISCHETTI MASSIMO ,  HERGENROTHER JOHN ,  LEONG MEIKEI ,  RENGARAJAN RAJESH ,  REZNICEK ALEXANDER ,  SOLOMON PAUL ,  SUNG CHUN-YUNG ,  YANG MIN

IPC: H01L29/02 ,  H01L21/762 ,  H01L21/8238 ,  H01L29/04 ,  H01L29/786 ,  H01L31/109

Abstract: The present invention provides a semiconductor material that has enhanced electron and hole mobilities that comprises a Si-containing layer having a crystal orientation and a biaxial compressive strain. The term “biaxial compressive stress” is used herein to describe the net stress caused by longitudinal compressive stress and lateral stress that is induced upon the Si-containing layer during the manufacturing of the semiconductor material. Other aspect of the present invention relates to a method of forming the semiconductor material of the present invention. The method of the present invention includes the steps of providing a silicon-containing layer; and creating a biaxial strain in the silicon-containing layer.

公开(公告)号：AU2003215750A1

公开(公告)日：2003-10-27

申请号：AU2003215750

申请日：2003-03-14

Applicant: IBM

Inventor： SOLOMON PAUL ,  WONG HON-SUM PHILIP ,  FISCHETTI MASSIMO ,  LAUX STEVEN

IPC: H01L27/08 ,  H01L21/8238 ,  H01L21/84 ,  H01L27/092 ,  H01L27/12 ,  H01L29/10 ,  H01L29/423 ,  H01L29/786 ,  H01L29/04 ,  H01L21/335 ,  H01L29/739 ,  H01L27/088

Abstract: A method (and structure) for an electronic chip having at least one layer of material for which a carrier mobility of a first carrier type is higher in a first crystal surface than in a second crystal surface and for which a carrier mobility of a second carrier type is higher in the second crystal surface than the first crystal surface includes a first device having at least one component fabricated on the first crystal surface of the material, wherein an activity of the component of the first device involves primarily the first carrier type, and a second device having at least one component fabricated on the second crystal surface of the material, wherein an activity of the component of the second device involves primarily the second carrier type.