公开(公告)号：JP2002270612A

公开(公告)日：2002-09-20

申请号：JP2002037664

申请日：2002-02-15

Applicant: IBM

Inventor： FORNOF ANN RHEA-HELENE ,  GATES STEPHEN MCCONNELL ,  HEDRICK JEFFREY CURTIS ,  NITTA SATYANARAYANA V ,  PURUSHOTHAMAN SAMPATH ,  TYBERG CHRISTY SENSENICH

IPC: H01L21/3205 ,  H01L21/28 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/316 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To provide a simple method where cost effect for patterning a mutual connection structure, in which the material subjected to spin-on is used as a hard mask, is high. SOLUTION: By using the material subjected to spin-on processing to the hard mask, a process can be executed by using a single tool, and usage of a single curing step is enhance, which is not normally used in a patterning process of the conventional technique, in which a CVD hard mask is used. Selection of a polishing stop layer (formed on a surface of low k dielectrics), which has permittivity nearly equal to that of dielectrics positioned below is enabled by using spin coating, so that effective permittivity of an obtained structure is not significantly increased. The hard mask used contains, at least two kinds of spin-on dielectric materials having different etching speeds.