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    Group iii{14 v semiconductor twinned crystals and their preparation by solution growth
    1.
    发明授权
    Group iii{14 v semiconductor twinned crystals and their preparation by solution growth 失效
    第III组{14 V半导体二次晶体及其解决方案增长的准备

    公开(公告)号：US3642443A

    公开(公告)日：1972-02-15

    申请号：US3642443D

    申请日：1968-08-19

    Applicant: IBM

    Inventor： BLUM SAMUEL E ,  FOSTER LUTHER M ,  PLASKETT THOMAS S

    IPC: C30B13/02 ,  C30B13/34 ,  C01B25/08 ,  B01D9/00 ,  B01J17/02

    CPC classification number: C30B13/02 ,  C30B13/34 ,  Y10S117/902 ,  Y10S148/107 ,  Y10S148/115 ,  Y10S148/119

    Abstract: The disclosure presents a method of growing large crystals of GaP from solution in which a zone of liquid gallium saturated with GaP is passed upward through a GaP feed ingot. In order to grow large crystals, it was found necessary to initiate growth onto a twinned seed crystal in which all of the twin planes are parallel to each other and parallel to a growth direction. Wafers cut parallel to the twin planes exhibit a (111) surface which are suitable for electroluminescent devices.

    Abstract translation: 本公开提出了一种从GaP的饱和的液态镓区向上通过GaP进料锭的溶液中生长GaP的大晶体的方法。 为了生长大晶体，发现有必要在其中所有双平面彼此平行并且平行于生长方向的双晶晶中引发生长。 平行于双平面切割的晶片表现出适合于电致发光器件的（111）表面。

    Method of preparing green-emitting gallium phosphide diodes by epitaxial solution growth
    2.
    发明授权
    Method of preparing green-emitting gallium phosphide diodes by epitaxial solution growth 失效
    通过外源溶液生长制备绿色发光磷灰石二极体的方法

    公开(公告)号：US3585087A

    公开(公告)日：1971-06-15

    申请号：US3585087D

    申请日：1967-11-22

    Applicant: IBM

    Inventor： BLUM SAMUEL E ,  FOSTER LUTHER M ,  SHIH KWANG K ,  WOODALL JERRY M

    IPC: C30B15/00 ,  H01L21/208 ,  H01L33/00 ,  H01L7/46 ,  H01L7/00 ,  H01L7/38

    CPC classification number: C30B15/007 ,  H01L21/02392 ,  H01L21/02543 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/02625 ,  H01L33/00 ,  Y10S148/107 ,  Y10S148/119 ,  Y10S148/134 ,  Y10S438/919

    Abstract: GREEN-EMITTING ELECTROLUMINESCENT GALLIUM PHOSPHIDE DIODES ARE GROWN BY LIQUID PHASE EPITAXY. A GA-GAP MELT CONTAINED IN A COVERED CRUICIBLE IS PLACED IN A VERTICAL FURNACE. A GAP SUBSTRATE WAFER IS INSERTED INTO THE MELT WHICH HAS BEEN MAINTAINED AT A TEMPERATURE OF ABOUT 1110-1140*C. AN N-TYPE GAP LAYER IS PRODUCED BY THE ADDITION OF A DOPANT SELECTED FROM S, SE, AND TE TO THE MELT WHICH IS SLOWLY COOLED TO A TEMPERATURE OF ABOUT 1070-1100*C., AT WHICH TIME THE MELT IS COUNTERDOPED WITH AN ACCEPTOR DOPANT, E.G., ZN OR CD. THE MELT IS FURTHER COOLED TO ABOUT 1030-1060*C., CAUSING THE GROWTH OF A P-TYPE LAYER, AFTER WHICH THE SUBSTRATE IS REMOVED FROM THE METAL AND FURTHER COOLED TO AMBIENT TEMPERATURES. ELECTROLUMINESCENT DIODES ARE THEN PREPARED BY THINNING THE SUBSTRATE SIDE OF THE WAFER TO REDUCE SERIES RESISTANCE. AU-ZN AND AU-SN ALLOY DOTS ARE APPLIED TO THE P AND N SIDE RESPECTIVELY, OF SAWED OR CLEAVED SECTIONS OF THE WAFER. GREEN-EMITTING DIODES PREPARED BY THE ABOVE METHOD HAVE EFFICIENCIES OF ABOUT 2.7X10-4, WHICH EFFICIENCIES CAN BE IMPROVED BY A FACTOR OF 2 OR MORE BY COATING THE DIODES WITH ANTI-REFLECTIVE EPOXY COATINGS. THE DIODES FIND UTILITY AS PANEL INDICATORS.

    "> METHOD OF PREPARING (BETA)
    5.
    发明专利
    METHOD OF PREPARING (BETA)"-A12O3 未知

    公开(公告)号：CA1081914A

    公开(公告)日：1980-07-22

    申请号：CA271787

    申请日：1977-02-11

    Applicant: IBM

    Inventor： FOSTER LUTHER M ,  SCARDEFIELD JOHN E

    IPC: C01F7/02 ,  C04B35/113 ,  H01M10/39

    Abstract: METHOD OF PREPARING "-Al2O3 .beta."-Al2O3 is a highly desirable material for serving the double function of solid electrolyte and separator in a rechargeable battery that employs sodium, Na, as the anode and sulfur, S, as the cathode. But conventional means for manufacturing the .beta."-Al2O3 require temperatures between 1400 and 1600.degree.C. By reacting .theta.-Al2O3 with Na2O, or a compound that yields Na2O on decomposition, the desired .beta."-Al2O3 is obtained at temperatures as low as 950.degree.C.

    7.
    发明专利
    未知

    公开(公告)号：FR2341529A1

    公开(公告)日：1977-09-16

    申请号：FR7700644

    申请日：1977-01-05

    Applicant: IBM

    Inventor： FOSTER LUTHER M ,  SCARDEFIELD JOHN E

    IPC: C01F7/02 ,  C04B35/113 ,  H01M10/39 ,  C04B35/10 ,  H01M10/26

    Abstract: beta ''-Al2O3 is a highly desirable material for serving the double function of solid electrolyte and separator in a rechargeable battery that employs sodium, Na, as the anode and sulfur, S, as the cathode. But conventional means for manufacturing the beta ''-Al2O3 require temperatures between 1400 DEG and 1600 DEG C. By reacting theta -Al2O3 with Na2O, or a compound that yields Na2O on decomposition, the desired beta ''-Al2O3 is obtained at temperatures as low as 950 DEG C.

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