公开(公告)号：DE3880019D1

公开(公告)日：1993-05-13

申请号：DE3880019

申请日：1988-05-31

Applicant: IBM

Inventor： FOWLER ALAN B ,  FREEOUF JOHN L ,  KIRCHNER PETER D ,  WARREN ALAN C ,  WOODALL JERRY M

IPC: H01L21/20 ,  H01L21/28 ,  H01L21/314 ,  H01L21/331 ,  H01L21/338 ,  H01L29/06 ,  H01L29/26 ,  H01L29/267 ,  H01L29/43 ,  H01L29/47 ,  H01L29/73 ,  H01L29/737 ,  H01L29/78 ,  H01L29/786 ,  H01L29/80 ,  H01L29/812 ,  H01L29/872 ,  H01L33/00 ,  H01L29/40 ,  H01L21/285

Abstract: A surface termination of a compound semiconductor is provided wherein conditions are provided for a pristine surface to be retained in an unpinned condition and a surface layer of a non-metallic material is provided. A GaAs substrate is heated in an oxygen-free atmosphere at high temperature with hydrogen sulfide, producing a pristine surface with a coating of gallium sulfide covered with a 1,000 nanometer covering of low temperature plasma enhanced chemical vapor deposited silicon dioxide.

公开(公告)号：CA1238719A

公开(公告)日：1988-06-28

申请号：CA503081

申请日：1986-03-03

Applicant: IBM

Inventor： FREEOUF JOHN L ,  JACKSON THOMAS N ,  KIRCHNER PETER D

IPC: H01L29/812 ,  H01L21/338 ,  H01L27/10 ,  H01L29/205 ,  H01L29/778 ,  H01L29/80 ,  G11C11/40

Abstract: YO984-085 REVERSIBLE CHARGE STORAGE FLOATING GATE HETEROJUNCTION DEVICE A semiconductor storage device provides reversible control of conduction in a band offset heterojunction field effect transistor by providing an asymmetric barrier controlled charge storage capability that can position a potential well across the Fermi level to produce conduction and away from the Fermi level for a non-conducting condition and to retain that position in the absence of a signal. A GaAs channel FET with a multilayer gate of in order of proximity to the GaAs channel a gate layer of GaAlAs, a storage layer of GaAs, an asymmetric barrier layer of GaAlAs graded toward the GaAs storage layer and an ohmic adapting layer of GaAs.

公开(公告)号：DE3880019T2

公开(公告)日：1993-10-28

申请号：DE3880019

申请日：1988-05-31

Applicant: IBM

Inventor： FOWLER ALAN B ,  FREEOUF JOHN L ,  KIRCHNER PETER D ,  WARREN ALAN C ,  WOODALL JERRY M

IPC: H01L21/20 ,  H01L21/28 ,  H01L21/314 ,  H01L21/331 ,  H01L21/338 ,  H01L29/06 ,  H01L29/26 ,  H01L29/267 ,  H01L29/43 ,  H01L29/47 ,  H01L29/73 ,  H01L29/737 ,  H01L29/78 ,  H01L29/786 ,  H01L29/80 ,  H01L29/812 ,  H01L29/872 ,  H01L33/00 ,  H01L29/40 ,  H01L21/285

Abstract: A surface termination of a compound semiconductor is provided wherein conditions are provided for a pristine surface to be retained in an unpinned condition and a surface layer of a non-metallic material is provided. A GaAs substrate is heated in an oxygen-free atmosphere at high temperature with hydrogen sulfide, producing a pristine surface with a coating of gallium sulfide covered with a 1,000 nanometer covering of low temperature plasma enhanced chemical vapor deposited silicon dioxide.

公开(公告)号：CA1244149A

公开(公告)日：1988-11-01

申请号：CA503080

申请日：1986-03-03

Applicant: IBM

Inventor： FREEOUF JOHN L ,  JACKSON THOMAS N ,  KIRCHNER PETER D ,  TANG JEFFREY Y-F ,  WOODALL JERRY M

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/68 ,  H01L29/737 ,  H01L29/76 ,  H01L29/06

Abstract: SEMICONDUCTOR BALLISTIC ELECTRON VELOCITY CONTROL STRUCTURE A semiconductor device where an emitter material composition and doping profile produces an electron gas in a base adjacent a hand offset heterojunction interface, the electrons in the electron gas in the base are confined under bias by a low barrier and the ballistic carriers have their kinetic energy controlled to prevent intervalley scattering by an electrostatic barrier that under influence of bias provides an essentially level conduction band in the portion of the base adjacent the collector.

公开(公告)号：CA1159628A

公开(公告)日：1984-01-03

申请号：CA356812

申请日：1980-07-23

Applicant: IBM

Inventor： FREEOUF JOHN L ,  WOODALL JERRY M

IPC: C01B3/00 ,  F17B1/00 ,  B01J19/04

Abstract: Hydrogen may be stored atomically and may be released molecularly by using as a host amorphous tetrahedrally coordinated material with high surface to volume ratio.