公开(公告)号：CA1244149A

公开(公告)日：1988-11-01

申请号：CA503080

申请日：1986-03-03

Applicant: IBM

Inventor： FREEOUF JOHN L ,  JACKSON THOMAS N ,  KIRCHNER PETER D ,  TANG JEFFREY Y-F ,  WOODALL JERRY M

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/68 ,  H01L29/737 ,  H01L29/76 ,  H01L29/06

Abstract: SEMICONDUCTOR BALLISTIC ELECTRON VELOCITY CONTROL STRUCTURE A semiconductor device where an emitter material composition and doping profile produces an electron gas in a base adjacent a hand offset heterojunction interface, the electrons in the electron gas in the base are confined under bias by a low barrier and the ballistic carriers have their kinetic energy controlled to prevent intervalley scattering by an electrostatic barrier that under influence of bias provides an essentially level conduction band in the portion of the base adjacent the collector.